Thomas Kessler Email & Phone Number

Cupertino, California, US

Koto-ku, Toyosu, Tokyo, JP

Modeling, characterization, and development of integrated devices in BCD processes- Characterization and modeling of LDMOS, CMOS, BJT trnssitors, diodes, and passive devices in the company's own semiconductor process- Working with foundry partners to develop new active and passive devices in foundry partner's processes- Working with internal design.

Armonk, New York, NY, US

Working closely with representatives of other companies discussing modeling topics and issues

Armonk, New York, NY, US

Modeling of SiGe NPN bipolar transistors for analog, wireless, and high frequency applications using Hicum and Vbic models in Spectre, HSpice, and ADS. Duties include:- Parameter extraction for dc, ac, rf, temperature, 1/f noise, and noise figure modeling- Generation of statistical, corner, and mismatch model - Test plan definition for device measurements.

Modeling engineer in a multinational environment for a world leading analog/mixed signal semiconductor foundry. Duties include:- On-wafer measurements (dc, cv, rf, temperature) using IC-CAP- Characterization of primitive devices (MOS and BJT transistors, resistors, capacitors, and diodes) for HV and automotive applications- Working closely with Design.

Dresden, DE

Assistant in various of the university's research projects. Duties include:- On-wafer measurements (dc/ac/temperature) using ICCAP- Modeling of substrate coupling effects in bipolar transistors using an enhanced substrate network partitioning the network into an epi, perimeter, and pure substrate region- Modeling of MOS transistors using a simplified EKV.

Intern with the company's bipolar modeling group, responsible for evaluation and introduction of the HiCUM compact model. Duties include:- On-wafer measurements using ICCAP- Development of transforms/macros within ICCAP to automate parameter checking and scaling check of geometry specific HICUM models- Measurement (dc/cv/ac/temperature) and extraction of.