Dr. Thomas Morf was born in 1961, in Zürich, Switzerland. He received the B.S. degree from the Zürich University of Applied Science, Switzerland, in 1987, the M.S. degree in electrical and computer engineering from the University of California at Santa Barbara (UCSB), in 1991, and the Ph.D. degree from the Swiss Federal Institute of Technology (ETH), Zürich, in 1996.From 1989 to 1991, he worked as a Research Assistant at UCSB, performing research in the field of active microwave inductors and digital GaAs circuits. In 1991 he joined ETH, where in his doctoral work he investigated circuit design and processing for high-speed optical links on GaAs using epitaxial lift-off techniques. In 1996 he transferred to the Electronics Laboratory of ETH, where he led a research group in the area of InP-HBT circuit design and technology. In 1999 he joined the IBM Zürich Research Laboratory, Rüschlikon, Switzerland. His current research interests include: ESD circuit protection, all aspects of electrical and optical high-speed high-density interconnects, THz antennas and detectors, and high-speed and microwave circuit design. Dr. Morf is a Senior Member of the IEEE, has co-authored more than 200 papers and is co-inventor of approximately 60 patents.