Power Process Integration Engineer
Dallas, Tx, Us
To push the envelope on power switch performance for achieving step function increases in efficiency and density of power converters, I worked on design and development of power switches made out Gallium Nitride (GaN), Aluminum Nitride (AlN) based compound semiconductors with material properties superiors to incumbent silicon material. Lead device development for high voltage analog technologies: including defining critical unit process development targets and integration flows, device simulations to propose designs meeting target roadmap performance and reliability needs, test structure definition, design rule generation, process control document (PCD) generation, and device characterization. Device development owner for below technologies1. Multiple generations of Texas Instruments (TI’s) depletion mode High Voltage (>200V) GaN transistor process nodes. 2. Low Voltage Switches (<200V) on TI’s enhancement mode GaN power IC platforms.3. Low and high holding voltage ESD components based on MOSFET’s, SCR’s, NPN’s and PNP’s for unique substrate biased High Voltage SOI technology. Interacted with business unit marketing and design team managers to define roadmaps for power IC technologies. Product feature and device target performance definitions based on competition analysis, market needs and device improvement research trends working with design, process engineering and package development teams.Collaborate with process engineering, yield improvement teams to proactively adopt design rules to mitigate yield loss issues during technology ramps and transfers. Develop effective tests to screen out devices/wafers that are out of spec. Work closely with reliability engineers to run design experiments, data collection and analysis to understand intrinsic and extrinsic reliability fail modes and generate curves, rules for accomplishing predictive design for reliability methodology for novel device designs and materials integrated in to analog IC processes.
