Thomas Lopez Email & Phone Number

Vélizy-Villacoublay, Fr

France

Exterior and Interior Lighting / Signalization- Responsible of optical development in innovation projects from design to validation, including prototyping and optical characterization - Define/Adapt technical specifications and optical deliverables in innovation projects-Internal implementation of new design and simulation tools- Contribution to product strategy and technology roadmap

France

To identify, evaluate and maturate emerging technology for automotive application : *Green technology*New HMI Experience in Displays, AR-HUD*Disruptive Lighting/Signalization*Optical Computing--> In charge of Openlab Phovea, common research structure Stellantis- C2N--> Supervision of R&D Projects, CIFRE PhD thesis, interns and apprentices : CAO, Optical characterization Matlab/Python--> Participation to European research projects --> Internal scientific training : Perception and Technology for 3D Displays , Nanotechnology, Optical Computing

Région De Paris, France

Design, Fabrication and Characterization of a plasmonic demonstrator for automotive HUD.--> Design of lithography mask--> Clean room fabrication : chemistery, Plasma coating, etching, MEB --> Optical characterization by laser reflectometry--> Project lead "nanoimprint" with PME Specific missions for Groupe PSA : --> State of Arts regarding emerging technologies (scientific literature, patents, workshops)--> HUD Optoelectronic characterization --> CAO Optical Simulations (SPEOS)

Région De Toulouse, France

Design, fabrication and Characterization of nanostructured planar lenses dedicated to CMOS Image sensors for Near Infrared application.This work deals with the design, fabrication and characterization of nanostructured planar lenses dedicated to near infrared detection for CMOS image sensors. Applications and optronic systems involved in near infrared imaging have been investigated in order to highlight the strong interest of CMOS images sensors for the 800-1100 nm spectral band. Limitations of silicon and pixel structure explain the integration of nanostructured planar lenses compatible with CMOS fabrication process : a plasmonic lens, a dielectric phase-Fresnel lens, a metallic Huygens lens and a gradient-index lens. 2D electromagnetic simulations of a CMOS pixel with each planar lens have demonstrated the good performance of the Huygens lens for low fill factor pixels and the phase-Fresnel lens for standard pixels.3D simulations of these lenses have been performed for their integration and fabrication in CMOS image sensors. The 3D design by numerical simulations of a gradient-index lens has shown its potential interest for CMOS pixels. The experimental performance of a dielectric lens "post-process" integrated/fabricated at LPN-CNRS and a metallic lens "in-process" by a CMOS foundy have been evaluated by electro-optical characterization. Several perspectives of this work about lens fabrication and potential for improvement have been explored. --​> Bibliographic study : CMOS Image sensor improvement for NIR application --​> Self-training in electromagnetism FDTD software MEEP--​> 2D and 3D simulation of CMOS pixels --​> Clean Room fabrication--​> Electro-optical characterization of CMOS Image sensors--> International conferences

Région De Toulouse, France

Etude de pertes magnétiques dans des noyaux de ferrites utilisés dans la fabrication de micro-bobines dans le but de réaliser a posteriori un dimensionnement optimum des composants. Ce stage a été réalisé au sein du LAAS-CNRS dans l’équipe ISGE. Tâches effectuées : -->Etude bibliographique : Etat de l’art sur les méthodes de mesure de pertes magnétiques .-->Caractérisation électrique via une station sous pointes-->Simulations électromagnétiques via MAXWELL 3D

Irlande

I worked in the High-K research team, headed by Dr Paul Hurley, within the Micro & Nanoelectronics Center. Dr Paul Hurley’s team mainly works on the integration of high-k oxides on III-V substrates in order to fabricate III-V MOS capacitors and MOSFETs. One of their projects focuses on the development of III-V junctionless transistors. The aim of my internship was to design a new lithography mask for the fabrication of a new batch of III-V junctionless transistors before the project mid-term review (14 th of September). In parallel of this work, I also helped my supervisor Vladimir Djara with the electrical characterization of devices made before my internship started. Tasks : --> Design of a new lithography mask using Mentor Graphics IC Station--> Electrical characterization of transistors, MOS capacitors, PN diodes and circular transmission line (C-TLM) structures using a Cascade probe station and an Agilent B1500 parameter analyzer,--> Analysis of the measurements using MS-Excel and Origin (Origin Lab).

Docteur, Photonique Et Systèmes Opto-Electroniques

Ingénierie Plasma, Electronique Et Optique

Activities and Societies: Responsable du Pôle Etude de la Junior Entreprise "Polytech Expertise" : --> Rencontre avec les clients, mise au.

Master Recherche, Milieux Et Matériaux En Conditions Extrême