Trish Smith, Ph.D. Email & Phone Number

Dallas-Fort Worth Metroplex

Thin film deposition and plasma etch processing. Consulting for process solutions for thin film plasma etch and deposition as well as resist strip. Expert in process recipe creation, improvement or development, qualification procedures and documentation of plasma deposition or etch processes for Si, GaN, GaAs and HgCdTe device applications. Full time, part time, short term or long term contracts. Local or remote. Registered in Texas and New York States. Clients include NexGen Power Systems, Syracuse, New York (GaN, SiN, Al etch process support. Plasma Therm Versaline ICP etch with OES).

Dallas/Fort Worth Area

2000-2015: Elected to eight two-year terms as Secretary, Dallas-Fort Worth Section of the American Chemical Society.2019-2023; 1992-1997: Awards Committee member, Dallas-Fort Worth Section of American Chemical Society; 1996, 2021 Awards Committee Chairman

Dallas/Fort Worth Area

Addison, Texas

Senior Process Engineer in MEMS semiconductor processing facility. Created new and developed or improved existing processes using DOE (JMP) methodology for MEMS devices based on Si substrates. Processes include dielectric film etch (LAM 4500 oxide, nitride, SiON), DRIE Bosch process for deep Si etch (STS DRIE etch tool), PECVD SiO2, SiN, SiON (STS PECVD tool), ash/ resist strip and passivation, descum processes using Nanoplas barrel asher and Gasonics Aura strip tools. Thin Film measurement KLA-Tencor UV1250, KLA-Tencor Flexus film stress measurement, Zeta3D (digital) optical microscope.

Richardson, Texas

Plasma process development for GaN, GaAs and Si based devices.• Plasma Process Engineer, (2016-2017 ) Metal Etch, BAW Pilot Line (startup), Farmers Branch, TX; Etch AlCu, W, TiW, SiO2, SiN for BAW devices on startup pilot line; sustain production processes.• New Technology Integration, GaN Via etch, Plasma Process Engineer (2011-2016 ) Developed and released to production Trade Secret (author) etch process for vias through 100 um SiC/GaN backside process. Process enabled production of state of the art GaN technologies. Established trunk etch (SiN), and GaN mesa etch on production SPTS etch tools for GaN line. Established ash processes for GaAs and GaN production lines (Trion tools).• Experienced in thin film metrology including Thermawave, ANK, Ellipsometry, AFM, SEM, and XPS, Auger ES, D-SIMS and TOFSIMS.

Injection molded and compression molded precision optical components from various plastic materials. Antireflective coatings in the visible to near-IR wavelength range. Diamond-turned optical mirrors.• Created optical coating department for deposition of antireflection and high reflectivity coatings on optical plastics such as acrylic, polycarbonate and cyclic olefin polymers, as well as Al diamond machined mirrors. Procured and ran equipment for both coating and characterization, including VPT evaporation coater with electron gun, thermal source and ion beam assisted deposition, SEM (JEOL 6490LV variable pressure instrument), variable angle spectroscopic ellipsometer (Woollam V-VASE). • Trained technician to operate and maintain coating and characterization equipment. Developed standard operating and maintenance procedures for coating and characterization equipment.

• Patents: 35 US and Foreign; most of these received one or more TI Patent Awards for their continued use in production fabs worldwide.• Elected Distinguished Member of the Technical Staff (less than 2% of staff); 2001, Silicon Technology Development• Elected Senior Member of the Technical Staff; 1998, Silicon Technology Development• Plasma Etch, Kilby and DMOS6 Fabs; 1998-2007, CMOS1. Developed trench etch and developed and patented in situ cleans for low k materials. • Surface Preparation Group, Kilby Fab; 1998-2007, CMOS1. Invented, developed and implemented into Cu production fabs plasma cleans and resist removal processes compatible with low k dielectric materials and Cu. Invented H-plasma clean used in all Cu device fabs at TI, worldwide.• Plasma Etch Branch, Semiconductor Process and Device Center, Process Design and Control; 1995-1998. Developed dry plasma clean processes for post contact and post via etch applications. Invented oxygen-free photoresist strip and dry clean processes for copper-based logic devices. Invented post contact Si damage removal process for 1Gb memory device flow.• Materials Research Laboratories, Corporate Research and Development, Member of the Technical Staff, III-V Materials Branch, 1993-1995. Developed and instituted the use of nondestructive, optical spectroscopies for screening AlGaAs/GaAs heterojunction bipolar transistor (HBT) structures. • Infrared Device Technology Research, Central Research Laboratories, Member of the Technical Staff, 1986-1993. Developed sequential HgCdTe remote plasma cleanup and dielectric passivation for capacitor and diode infrared device structures, with in situ spectral ellipsometric real-time monitor. Invented and developed for manufacturing, baseline processes using low temperature, low pressure metalorganic chemical vapor deposition for dielectrics on HgCdTe for IR device applications.

Phd, Chemistry

B.S., Chemistry

Activities and Societies: Phi Beta Kappa, Sigma Xi Honor Societies

Education record