Shift Dry Etch process engineer in the Boise R&D facility. Responsible for the monitoring of current Dry Etch processes on development DRAM, NAND, and PCRAM parts. Ensures the correct processing and completion of etch development tests. Investigates process issues real-time, and develops process efficiency projects.

Dry Etch representative of the Boise production facility DRAM process team, responsible for developing and overseeing yield improvement projects and the introduction and ramp of new DRAM parts. Worked with counterparts in production facilities at other sites to share process improvement learning.

Responsible for the operational efficiency, cost of maintenace, and process improvement on the Applied Materials DPS toolset in Dry Etch at the Boise production facility. Worked with shift technicians and engineers, fab planners, and other fab departments to increase tool utilization and improve yield margins on processes ran on the DPS. Was the Dry Etch Cost champion, responsible for organizing and mentoring area cost reduction teams and overseeing department cost reduction projects.

Responsible for the management and development of ~15 shift technicians and engineers in the Dry Etch department of Micron's Boise production facility. Regularly made critical decisions relating to line-down situations with little if any assistance from senior management. Led and participated in multiple cross-functional teams focusing on product quality and efficiency.

Shift Dry Etch process engineer in the Boise production facility. Responsible for the monitoring of production Dry Etch processes for DRAM and NAND. Ensures the correct processing and completion of etch development tests. Investigates process issues real-time, using various sources of data and general knowledge of other fab areas to determine root cause. Member of the new technology transfer team, which first introduced recently developed parts into the production fab, and also characterized etch processes of those parts for transfers to other company production facilities.