I am an experienced power device engineer with over 20 years’ experience, currently working as a consultant. I specialise in design and development of advanced power semiconductor devices [MOSFETs/IGBTs/Diodes/HEMT etc.] both in lateral and vertical configurations, including trench and Superjuction architectures, up to 10kV, in Silicon and WBG semiconductors.My focus lies in optimising device architectures for maximum energy efficiency, minimal foam factor and low cost. I have skills in design optimization of high-power semiconductor devices to ensure compliance with Safe Operating Area (SCSOA, RBSOA, UIS etc.) requirements. I have expertise in optimising long-term reliability (HTRB, HTGB etc.) of power semiconductor devices. My work includes addressing thermal challenges through innovative cooling solutions and thermal simulations, improving device performance and lifespan.I have experience in testing and characterization of high-power semiconductor devices to ensure optimal performance, reliability, and yield. I thrive in collaborative environments, partnering with R&D, manufacturing, and testing teams to drive cohesive and successful projects.I have 8 granted patents and over 30 publications in the field of power semiconductor devices.