Wesley Munger Email & Phone Number

Hillsboro, Or & Richardson, Tx

•Etch module senior engineering rep for 6”GA-As product line technology transfer project. •Innovated known BCB science to yield targeted perfectly vertical via profiles in highly marginal process interaction design spaces as well as widened process margin to eliminate predicted critical reliability failure mechanism for VIA blow-outs (extensive DOE characterization and process modeling for BCB via profile functionality). Process was identified as a record fab-critical success and was augmented by improvements in profile control and stability by introducing an additional 180% reduction in via profile (B/T) variability as well as +35/+31% improved via1/via2 resist margin. Published BCB etch process design BKM and profile interaction modeling for SPTS etcher CPX configuration.•Developed complex BCB etch process to attain new and improved via1&2 profile regime while still achieving100% project goals for all three phases for the year. Designed complex process model of the highly improved profile interactions that included the initially blocking mechanism limitations of BCB substrate anisotropy - innovating known BCB sciences to yield via profiles desired by process integration team as predictors for maximum via parametric performance and reliability, thus eliminating a base highly marginal process interaction design space identified as a predicted critical via failure mechanism and inevitable customer return issue/line-down state.•Successful product fab startup launch in record time for all three project phases. Critical tool-release milestones were met well before project deadlines even as un-expected process development projects threatened line success but were assimilated during the critical startup expected bottle-neck qual status phase. Successfully released 14 critical tool(s)/chamber(s) and minimized tool-to-tool variance via tool-matching troubleshooting and spc control.

Dallas/Fort Worth Area

•Defect reduction and yield improvement team leader – lead 15+ non-direct reporting engineering team members in reduction of defects found inline and end of line, organized and lead sub-teams for resolution of issues outside normal team’s scope, report on group’s activities and progress in bi-weekly management meetings. Responsible for root cause analysis of customer returns and reports.•Owner of Plasma and Diffusion and wet clean processes for multiple, continuously-sustained devices, and development devices across two fabs simultaneously.•Process Ownership of: Gate Poly Etch Flash floating gate stack etch Direct Plasma Nitridation of Gate Oxide FSI wet cleans•Team Lead for the following workgroups: Plasma Module, Gate Loop, FEOL Transistor/Speed, 'Code-Red' Excursion Response, Plasma Parametric Scrap Team Rep., Flash Plasma Process/Diffusion/Wet Development/Tech Transfer, Diffusion/Wet sDD Reduction, DMOS VI 300mm Fab Start-up Gate Etch Development/Transistor Team, AMAT DPS and MxP Poly/Bit/STI Etch & DPN Gate Oxide Tool Release/Process Development/Conversion, FMEA Development and Parametric Sensitivity Modeling

Accomplishments:Optimization of plasma etch processes and methodsDeveloped, characterized, and implemented highly improved 14 step stack etch process.Innovated major process changes and identified failure mechanism blocking critical fab-to-fab transfer of F05/F035 FLASH products and led team efforts to engineer manufacturable solutions.Championed critical projects enabling high volume manufacturing success resulting in improved photo-etch imbedded flash bias margins reducing rework by 24%, stack by 18%, and gate by 32%, significantly reduced cd and profile multi-factored variance, removal of resist breakdown channeling and degraded stack profiles, discovery and elimination of gross flash cd variations due to cross-array and array-to-array size mode-hoping functionality to resist thickness, sti step improvements, fab harmonization, and photo-etch bias margin resolution. Cumulative efforts resulted in a 3 year PFO impact of $ 56 M.Championed SUN speed team Fab transfer 'crisis risk ramp' product line as front-end-of-line team leader achieving ground-breaking speed-idrive-inline 'within 1 nm' initial gate reticle transistor targeting a pocket doping offset due to profile/poly film and tool set precision tuning, including implementation and innovation of speed-sensitive SPC methodology accredited as the primary critical metric enabling final product line success. Improved ITY by 24.5% resulting in a PFO impact of $ 42 M.C07 density specific poly etch development of robust process and improved process interaction marginality for extreme low-density and highly variable through-out poly pattern to completely eliminate p-channel undercut causing major parametric scrap.Established inline gate control methodology enabling a PFO impact of $3.4M.Reduced gate cycle time by 1 day and increased MPY by 0.5% primarily due to scratch reduction resulting in a PFO impact of $1.9M.

Increased process margin by optimizing gate etch recipe to reduce N/P-channel poly flare enabling manufacturability.Led fab-critical 'Code-Red Excursion Response Team’ founded to rapidly contain, diagnose, and engineer solutions to complex emergency process, parametric, and probe yield excursions.Defect reduction (BARC under etch) kidney-bean fallout root-cause discovery gate loop solution for PFO $1.1MTeam Leader Poly & Bit Etch – Mentored/trained 9 process engineers & 8 technicians.Published BKM tool matching critical process qualification methodology and procedures established as TI fab standards for MxP and DPS sti/poly/stack etch and DPS gate-ox nitridation.Championed record number of 87 critical process-tool combination qualifications of AMAT MxP and DPS P5200 critical gate, floating gate, and gate-ox nitridation tool/processes.Extensively characterized and modeled DPN process sensitivities to gate-ox nitridation (n-dose) profile affects using DOE's factoring all possible significant input variables. Developed a new seasoning process/procedure designed to significantly reduce first-wafers effects on the extremely sensitive product beta ratio resulting in a 0.3% PY improvement.Company to company Tech Transfer team leader/key member for all four technology transfers (TI to ANAM)Major tool set: AMAT MxP and DPS P5200, FSI wet clean, DNS HoodMetrology tool set: Film Thickness: KLA F5, Therma-Wave Opti-Probe Particle Detection: KLA SP1, Tencor Surfscan 62** and 64** Resistivity measurement: Tencor RS75, RS100 Critical Dimension measurement: KLA SEM, JEOL tilt SEM

Fayetteville, Arkansas Area

•HIDEC Research Fellowship Grant Recipient - Etch process development thesis research for unexplored, highly selective chromium-silicide substrate.•Thesis research project ‘Unexplored, Highly Selective Chromium-Silicide Etch’ process development, complimented by advanced attained poly etch process development knowledge, required full-front-end-of-line processing understanding and sound theoretical plasma etch DOE experience to determine process feasibility and manufacturability in the development of final robust process revision.•Championed efforts to develop a highly selective an-isotropic dry etch process of chromium-silicide substrate. Designed test recipes for dep, pattern, etch, clean-up and optimized etch process via complex DOE set experimentation targeting profile, cd variance, film selectivity, and resist margin parameters.

Winter Springs, Florida Area

•Formulated and synthesized solvent-borne and water-borne coatings including polyurethane, vinyl, polyester, latex, and epoxy systems. Developed new formulas and revised existing formulas in order to maximize cost effectiveness and take advantage of current technology. Evaluated and directed applications of coating systems for railcar and swimming pool industries. Performed cost analysis and determined feasibility of new projects. Implemented and administrated quality control procedures for all product lines.

Fayetteville, Arkansas Area

•Specialized in polyimides research; chemical resistant polyimides for coatings in microelectronics.•Sole University of Arkansas recipient of coveted National Science Foundation ‘SILO’ research grant, ‘Investigation of Diffusive Barrier Properties of Polyimides for Potential Application as Selective Ionic Gettering Coatings in Micro-electronics’.•Presented poster thesis and publication of research during NSF sponsored technical convention, 1996 Pine Bluff campus, Univ of Arkansas.•Second time sole Univ of Arkansas, extremely competitive, N.S.F. ‘SILO’ research grant recipient primarily awarded based on convention research poster presentation of 4 years accumulated polyimide experimentation findings and potential future applications worthy for patented process.•Synthesized and identified polymers. Purified, separated, and distilled several polymers and chemicals. Measured the physical properties of various polyimides including the glass transition temperatures, crystalline melting points, solubility rates of gases and liquids at various pressures, and densities. Operated experimental equipment such as the differential scanning calorimeter. Built and calibrated permeation equipment, gas sorption apparatus, and a density gradient column.