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Won Jun Jo is listed as Hardware R&D | Semiconductor Foundry Process | Quality, Reliability, and Yield Control at Broadcom Inc., based in San Jose, California, United States. AeroLeads shows a work email signal at lamresearch.com and a matched LinkedIn profile for Won Jun Jo.
Won Jun Jo previously worked as Staff Hardware R&D Engineer at Broadcom Inc. and Senior Process Engineer at Lam Research. Won Jun Jo holds Doctor Of Philosophy - Phd, Chemical Engineering from Massachusetts Institute Of Technology.
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AeroLeads found 1 current-domain work email signal for Won Jun Jo. Compare company email patterns before reaching out.
TECHNICAL EXPERTISE • Materials Synthesis, Devices Fabrication, and Processes Development− 12+ years hands-on experience in cleanroom nanofabrication to scale advanced technologies from concept to production: Etch (cryogenic ICP-RIE, CCP-RIE, RIE), thin-film deposition (ALD, CVD, PVD, thermal/e-beam evaporation, sputtering, spin-coating), lithography, DOE, statistical data analysis, SPC, PFMEA, DFMEA− Chemical synthesis: Solid state reaction, precipitation, metal-organic decomposition• Materials, Devices, and Processes Characterization− Metrology: SEM, CDSEM, Spectra Shape, FIB, TEM, ellipsometry, AFM, profilometry, − Physical analysis: Mass spectroscopy (ICP-MS, GC-MS), XRD, UV-Vis, BET, EDS, XPS, UPS, FTIR, IRRAS− Electrical analysis: Current-voltage curve, cyclic voltammetry, quantum efficiency, conductivity measurement− Electrochemical analysis: Impedance spectroscopy, circuit simulations (Z-View)− Statical analysis: JMP, MATLAB, C/C++, R
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Palo Alto, California, Us
Wireless Semiconductor Division, Broadcom Inc.− Hardware R&D for New Products Introduction − Foundry process development and optimization to manufacture wireless semiconductors for use in massive-volume RF Front-End modules− Quality, Reliability, and Yield control
Fremont, Ca, Us
Dielectric Etch Process Development & Optimization for VNAND Flash Memory & DRAM
Berkeley, Ca, Us
Scalable 3D Nanostructured Semiconductor Devices for CO2 Fixation o Project 1: Ultrathin (2 ~ 6 nm) SiO2 film as H+/O2 separation membrane− Investigated surface defects of SiO2 thin-films and illuminated their H+ transfer mechanism using advanced surface science techniques (FTIR, IRRAS, XPS, etc.) and electrochemical simulation, which is 1st in the field (led to publication at Advanced Functional Materials, Journal of Physical Chemistry C)− Modifying, running, maintaining, and stabilizing an plasma-enhanced ALD system to perform conformal coatings of SiO2, TiO2, Co3O4 (spinel structure), and Al2O3o Project 2: Photo-responsive inorganic nanotube assemblies for scalable CO2 conversion − Tackling the key challenges in enabling CO2 gas fixation in a cost-effective manner − Developed scalable semiconductor-device fabrication method leveraging cleanroom vacuum techniques (microsphere lithography, RIE, cryogenic ICP etching, ALD, etc.) into high-aspect-ratio 3D nanostructured device integration− Prototyped Co3O4/SiO2/TiO2 core-shell nanotube arrays on 4-inch Si wafers for CO2 gas conversion into biofuels using solar power, which is 1st in the field
Cambridge, Ma, Us
CVD-Polymer Interfacial Engineering for Organic Electronicso Project: Multimodal polymer thin-film integration into organic solar cells− Designed and built up an oxidative CVD (oCVD) equipment enabling conformal coatings of diverse conjugated polymers on any substrates− Introducing, running, maintaining, and stabilizing new oCVD processes to incorporate poly(3,4-ethylenedioxythiophene), polythiophene, polyselenophene, and poly(3,4-dimethoxythiophene) thin films into organic solar cells to enhance their efficiency and stability, which was 1st in the field (led to publication at Advanced Materials, Organic Electronics, Advanced Materials Interfaces, and two more papers under preparation)
Pohang, Gyeongsangbuk-Do, Kr
Doping-Treated Semiconductor Thin Films as Photo-electrodeso Homogeneous doping of P5+, In3+/Mo6+, and Ca2+ into BiVO4 and Ag3VO4− Invented unique doping methods for vanadate-based semiconductors to transform their properties according to target purposes (charge-transfer resistance decrease, band-gap size control, Fermi-level position control, etc.), which was 1st in the field (led to publication at Proceedings of the National Academy of Sciences, Angewandte Chemie International Edition, and one more paper under preparation)
New York, Ny, Us
Peacekeeping in Lebanon for 9 months out of 2 years in the Republic of Korea Army (ROKA)
Quick answers generated from the profile data available on this page.
Won Jun Jo works for Broadcom Inc..
Won Jun Jo is listed as Hardware R&D | Semiconductor Foundry Process | Quality, Reliability, and Yield Control at Broadcom Inc..
AeroLeads has found 1 work email signal at @lamresearch.com for Won Jun Jo at Broadcom Inc..
Won Jun Jo is based in San Jose, California, United States while working with Broadcom Inc..
Won Jun Jo has worked for Broadcom Inc., Lam Research, Berkeley Lab, Mit, and Pohang University Of Science And Technology.
You can use AeroLeads to view verified contact signals for Won Jun Jo at Broadcom Inc., including work email, phone, and LinkedIn data when available.
Won Jun Jo holds Doctor Of Philosophy - Phd, Chemical Engineering from Massachusetts Institute Of Technology.
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