Xiaomeng Shen Email & Phone Number

New York, Ny, Us

Menlo Park, Ca, Us

Milpitas, California, Us

• Analyzed statistics on datasets generated by semiconductor manufacturers to develop application use-case• Defined critical metrics for process monitoring, to flag abnormal process step contributing to yield loss;• Designed and trained CNN to identify measurement artifacts introduced by tool instability• Conducted technical product trainings at customer sites and internally; Mentored junior employees• Worked as point of contact for US manufacturing clients, to coordinate work between business unit and division• Worked with marketing/engineering groups to demo application value of our product to promote sales

Beijing, Cn

Participated in various PCT patent applications entering national phase;Drafted Chinese and US patent applications;Translated OA and drafted response letter;Legal research on various subjects.

Tempe, Az, Us

Worked in a cross-functional team (MBE growth, material characterization, device fabrication and testing) to research on structural, optical and electrical properties of III-V compound semiconductor for optoelectronic applications:• Characterized InAs/InAsSb multilayered thin films (superlattices) using high resolution X-ray diffraction (HR-XRD) and transmission electron microscope (HR-TEM) to get detailed structural information including composition and layer thickness for optimization of epitaxial growth and device modelling; • Analyzed superlattice strain in order to refine MBE growth recipes and epitaxial layer design; After optimization, material with minimum defect density has been achieved (defect-free under XRD and TEM); The minority carrier lifetime has been significantly improved (10us compared with 50ns of other superlattice systems)• Characterized different defect types from threading dislocation to point defects using multiple characterization techniques;• Characterized device performance in terms of dark current, photocurrent and detectivity measurements; Record low dark current has been achieved in our Long-wavelength IR detectors.• Designed, grew, processed and tested MOSCAP to study its electrical and materials properties, extracting information including sample capacitance, carrier density, trap energy level etc.

Tempe, Az, Us

Worked as teaching assistant for the following three courses:Materials Structure and Microstructure; Material Structure/Microstructure Lab;Physical Metallurgy Laboratory.

• Used high resolution transmission electron microscope (TEM) to study the structural properties of InAs/InAsSb superlattice and the fabricated photodetectors thereof• Used electron holography to study electric fields across III-V material based nBn device structures (photo-detectors)

Researched microstructure and mechanical properties of Magnesium Alloy with different neodymium composition using X-ray diffraction, SEM, microscope, energy spectrum and tensile test

•Fabricated nickel nano-cone and nano-sphere array by directional electrodeposition method, which can be used as potential packaging material for its significantly increased contact area.•Increased the wettability of the Nickel film from relatively hydrophilic to super-hydrophobic.

Doctor Of Philosophy (Ph.D.), Materials Science

Scpd Student

Bachelor Of Science (Bs), Materials Science And Engineering

Education record