Phd student focusing on 3-5 compound laser detachment technique

• Participate in 14nm FinFET program, be responsible for 14nm device electricity performance and PDK matching job, discover 9 key process differences by analyzing the correspond electrical data, and cooperate with the process engineer to formulate 3 process improvement plans.• Be a part of 22nm High-K metal gate R&D team member. Act as 22nm IO device owner, solve 2 key reliability issues of 22nm IO device, assist in setting new process improvement plans for IO device electrical performance and reliability issues. • Get involved in the modeling job of first version 22nm model, take charge of planning process conditions of model wafers, and the analysis of electrical data of model wafers, ensure the quality of the new 22nm model by comparing the historical model and the electrical data of model wafers.• Lead the job of decoupling MEOL capacitance of 22nm PEX, test and analyze more than 200 structures of the BEOL capacitance and resistance, and complete the TEM analysis of more than 30 corresponding structures.Play a key role in 28nm High-K metal gate device team, be responsible for electricity target delivery job of 20 products, help keeping stable mass production of 20 products

Trained 4 graduate students to operate all kinds of experiment systems, which include: atomic force microscope, transmission electron microscope, scanning electron microscope, electron back scattered diffraction technique, excimer laser system operation. Investigated the thin silicon film samples by scanning electron microscope, discovered the grain orientation by electron back scattered diffraction method, analyzed nDNS simulation results to decipher experiment results, revealed the random orientation grain growth essence of nucleation and grain growth.