Yi-Ting Wu Email and Phone Number
Yi-Ting Wu work email
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Yi-Ting Wu personal email
Expertise:1. Transistor characterization and process integration2. SRAM and emerging memory development (process, layout, characterization)3. Device modeling (BSIM) and analog circuit designs4. Chip yield enhancement, CP testing, reliability, and mismatch5. TCAD simulation / emulationSkills and Abilities:1. 10 years in the R&D device division of the third largest foundry (UMC): 1-1. 28, 22, and 14nm nodes: transistor characterization, layout, and modeling 1-2. STT-MRAM: bitcell design, layout, characterization, and yield analysis 1-3. Familiar with FinFET, planar CMOS, and STT-MRAM processes 1-4. Intensively work with process integration teams and product (yield) teams 1-5. Good coding skills to effectively analyze data (Excel VBA and Python) 1-6. Rich experiences in Taguchi design of experience (DOE) 1-7. Rich experiences in chip yield analysis and enhancement (CP testing) 1-8. Familiar with the analog circuit design (e.g., bandgap reference circuit)2. 7 years in TCAD / circuit simulation: 2-1. Synopsys Sentaurus / Coventor SEMulator3D 2-2. HSPICE and Verilog-A (transistor modeling) 2-3. SRAM simulations, modeling, and yield projection3. Hold a habit of annually studying textbooks and IEDM/VLSI-T short courses related to device physics, semiconductor process, analog / memory circuit designs, and spintronic physics.4. Enthusiast, ambitions, and innovation: pursue to be a technological leader instead of a follower, always try to find a smarter way to make products better.5. Teamwork: love to constructively discuss with people without hiding.Honors1. 18 IEEE journal paper publications and nine patents holding.2. Hold three critical patents which increase the yield of STT-MRAM.3. Obtaining the Ph.D. degree by exchanging to U.C. Berkeley for two years and publishing 5 IEEE transactions there (4 of them are first author paper), fully funded by Taiwan Government.
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Staff Device EngineerIntel Corporation Nov 2022 - PresentSanta Clara, California, Us -
Staff Device EngineerUnited Microelectronics Corporation (Umc) Dec 2017 - Nov 2022Hsinchu, TwSTT MRAM development (process, physics, cell layout, and characterization).1-1. 22nm STT-MRAM development: cell size 0.030um2, write pulse 50ns, 32 Kbits natural yield: 80%1-2. New 3T2M cell architecture development (patent: US 10,978,122)1-3. New multi-level-cell architecture development (patent: US 10,651,235)1-3. New layout to improve the yield of MTJ etch (patent: US 11,018,185)1-3. 22nm SOT-MRAM cell design: cell size 0.080um21-4. Develop a Python tool to efficiently analyze the CP testing data. -
Taiwan Government Funded Exchange Ph.D. Student In The Microlab Of Device Group, EecsUc Berkeley Dec 2015 - Dec 2017Berkeley, Ca, UsAdvisor: Tsu-Jae King Liu, IEEE Fellow, TSMC distinguished professor in microelectronics.2-1 Hybrid fin/planar LDMOS to boost the BV2/Ron of a FinFET by 2.25X times.https://ieeexplore.ieee.org/abstract/document/80103122-2 A FinFET-based SRAM architecture reduces the Vmin from 0.71V to 0.57V.https://ieeexplore.ieee.org/abstract/document/8661752 2-3 A high-k inserted-oxide FinFET (iFinFET) is proposed which exhibits a performance and density than conventional FinFET and GAA nanosheet.https://ieeexplore.ieee.org/abstract/document/95559182-4 A hybrid SRAM (GAA + iFinFET) is purposed for sub 3nm node to further reduce Vmin to 0.54V. The SRAM performance (Vmin, speed, and power) is better than other SRAMs (FinFET, nanosheet, and forksheet SRAMs).https://ieeexplore.ieee.org/document/9718594 -
Senior Device EngineerUnited Microelectronics Corporation (Umc) May 2012 - Dec 2015Hsinchu, Tw1. ~4 years device RD experience in 14nm FinFET and 28nm high-K / SiON MOSFET:-----1-1 Expertise in device physics, process Integration, and device characterization.-----1-2 Ion-Ioff boost and short channel effect suppression-----1-3 Front end process development: SiGe, SiP, high-k metal gate, well and halo implant.-----1-4 Reliability improvement. (HCI / NBTI / PBTI)-----1-5 Layout: Cadence Virtuoso / Synopsis Laker-----1-6 Device testkey and WAT algorithm development-----1-7 TCAD: Sentaurus S-Structure Editor (SDE), S-Process, S-Band-----1-8 Programming: Design a data analysis tool by using Excel VBA. It could facilitate the device/process development by automatically analyzing the experimental result, automatically generating characteristic programs, and generating power-point slides . It is adopted as a must-have tool by whole division (~150 RD employees). -
Application Engineer Of Embedded Core GroupAdvantech Jul 2010 - Jun 2011Neihu District, Taipei 114, Tw1. Linux platform planning / establishment / coding2. Wireless and Internet of Things (IoT) platform plan and establish under industrial computer protocol.
Yi-Ting Wu Skills
Yi-Ting Wu Education Details
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National Cheng Kung UniversityInstitute Of Microelectronics -
University Of California, BerkeleyElectrical Engineering & Computer Sciences -
National Taiwan UniversityElectrical And Electronics Engineering -
National Central UniversityElectrical And Electronics Engineering
Frequently Asked Questions about Yi-Ting Wu
What company does Yi-Ting Wu work for?
Yi-Ting Wu works for Intel Corporation
What is Yi-Ting Wu's role at the current company?
Yi-Ting Wu's current role is Semiconductor Device Engineer @ Intel|PhD|R&D|FinFET|GAA Transistor|SRAM|STT-MRAM|Yield Analysis|Process Variation Analysis|TCAD|Excel VBA|Python|Layout|IEEE Senior Member.
What is Yi-Ting Wu's email address?
Yi-Ting Wu's email address is yi****@****tel.com
What schools did Yi-Ting Wu attend?
Yi-Ting Wu attended National Cheng Kung University, University Of California, Berkeley, National Taiwan University, National Central University.
What skills is Yi-Ting Wu known for?
Yi-Ting Wu has skills like Characterization, R&d, Device Characterization, Semiconductor Device, Semiconductor Industry, Programming, Semiconductor Physics, Semiconductor Process, Excel Vba, Tcad Sentaurus, Semiconductors, Ic.
Who are Yi-Ting Wu's colleagues?
Yi-Ting Wu's colleagues are John Pontier, Kevin Le, Sajad Saghaye Polkoo, Phd., Jayesh Lanjewar, Jose Ulloa, Ahmad Sufian, Shruti Sampagavi.
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