Yoshihiro Sato

Yoshihiro Sato Email and Phone Number

Professor @ 東北大学
Miyagi Prefecture, Japan
Yoshihiro Sato's Location
Miyagi, Japan, Japan
About Yoshihiro Sato

Engineering professor (experienced technologist) of emerging memory cell deceives with practical array architectures of 2D/3D structure for SCM/storage/embedded memory in 12'-wafer R&D. Involved emerging memory technologies in the industry, such as MRAM(H-field/STT), ReRAM (2D/3D), Flash, and PCM, plus their selectors including recent chalcogenide-OTS, vertical-Diode and MOS-FET.My recent interest is in very high speed MRAM technology for application of Cache (SRAM-like) to cutting-edge FinFET / CFET nodes, that is going to be the future AI/edge-AI hardware with lower bit-cost and power consumption.One of my achievements contributing to emerging memory industry was a proposal of gate controlled 1T-1R ReRAM cell for current reduction (10.1109/TED.2008.919385), for the first time, which has become one of the standard technologies in current ReRAM products.Number of patent application is over 30. Several of academical literature, technical papers on MRAM or ReRAM were published. There were many presentations at conferences or workshops.

Yoshihiro Sato's Current Company Details
東北大学

東北大学

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Professor
Miyagi Prefecture, Japan
Yoshihiro Sato Work Experience Details
  • 東北大学
    Professor
    東北大学
    Miyagi Prefecture, Japan
  • 東北大学
    Professor
    東北大学 Jul 2023 - Present
    日本 宮城県 青葉区
    At CIES (Center for Innovative Integrated Electronic Systems).In charge of the R&D Device Team for the next-gen MRAM development.- To develop the leading-edge technologies of STT multiple interface (Double/Quad/Hexagonal) p-MTJ or SOT-MTJ devices for alternative buffer/cache-SRAM.- To demonstrate MRAM cell/array on 12"wafers, in order to boost the earliest social implementation.- To bring new evaluation systems for MRAM technology development into the world, collaborating with corporates.
  • Western Digital
    Principal Engineer, R&D Engineering
    Western Digital 2017 - Jul 2023
    Japan, Yokkaichi
    Research & development of emerging memory cell/device engineering for storage class memory.
  • Sandisk®
    Staff Engineer
    Sandisk® Jul 2011 - Jun 2017
    Japan, Yokkaichi
    Research & development of emerging memory cell/device engineering.- for Storage class memory (SCM) or High density solid state device (SSD) - with 3D architectural non-volatile memory.
  • Fujitsu
    Engineering Researcher
    Fujitsu Apr 1994 - Jun 2011
    Atsugi, Kanagawa Pref, Japan
    ●Research & Development of Silicon memory technologies, - ReRAM cell technologies (Pioneer of sub-100μA low current cell using gate control of "1T-1R cell") - MRAM cell technologies (Field-MTJ, STT-MTJ on 1T-1M cell for replacement of e-Flash product) - Embedded Flash for micro-controller●Research & Development of Optical semiconductor devices, - Compound semiconductor Laser diodes / Optical amplifiers / Optical modulator for optical fiber communication.

Yoshihiro Sato Skills

Memory Reram Semiconductors Flash Mram Semiconductor Laser Diode Research

Yoshihiro Sato Education Details

Frequently Asked Questions about Yoshihiro Sato

What company does Yoshihiro Sato work for?

Yoshihiro Sato works for 東北大学

What is Yoshihiro Sato's role at the current company?

Yoshihiro Sato's current role is Professor.

What schools did Yoshihiro Sato attend?

Yoshihiro Sato attended 東北大学, Nagoya University.

What skills is Yoshihiro Sato known for?

Yoshihiro Sato has skills like Memory, Reram, Semiconductors, Flash, Mram, Semiconductor Laser Diode, Research.

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