Yoann Tagro Email & Phone Number

San Diego, California, United States

Lille Area, France

# Project Leader in EU Project “COMET & SATURNE” (04/2011 – Present)- Extracted the Small Signal Equivalent Circuit (SSEC) and noise (tuner and NF50) measurement of the in-house HEMT GaN-Si (III-V) up to 40 GHz- Implemented the extraction automation of the SSEC and noise parameters on Agilent ADS - Designed a hybrid LNA ( @ 10 GHz) based on the in-house HEMT GaN-Si (III-V) transistor- Reported and disseminated: 3 Publications# Project Leader in EU Project “MIRANDELA” (04/2011 – 03/2012)- Modeled, and characterized RF noise of the last generation of Si transistors node: “28 nm HK/MG CMOS”- Extracted the SSEC, the noise model, and implemented the validation steps onto Agilent ADS- Supervised a Master’s student internship on RF noise measurement automation in W band (75 – 110 GHz)- Reported and disseminated: 2 Publications# Participation in Flexible Electronics Project (04/2011 – 03/2012)- Modeled, and characterized RF noise of a reported 65 nm SOI CMOS technology on a flexible substrate - Extracted the SSEC, and modeled the noise up to 110 GHz- Reported and disseminated: 4 Publications

Grenoble Area, France

#Thesis title:Characterization's Methodology of the High Frequency 4 Noise Parameters of Advanced CMOS (SOI) and HBT in Millimeter Wave Band 60-110 GHZ: (Development of a Variable In-Situ Impedance System)Duties:- Developed and applied knowledge of the BEOL and FEOL of the different silicon technologies- Implemented the noise multi-impedance method on ADS for an optimal characterization- Designed, characterized the tuners on CMOS & HBT technologies, and verified the electromagnetic performance of the passive lumped-elements- Performed noise measurement of MOSFETs and HBT using the tuners in the W band- Developed noise extraction code using TCL: the achieved noise performance was comparable with the state-of-the-art 2 dB and 3.5 dB @ 80 GHz, respectively, for 65 nm CMOS and 130 nm HBT - Investigated in-situ load-pull applications at millimeter wave range - Transferred the characterization methodology expertise between STMicroelectronics and IEMN- Reported and disseminated: 8 Publications* First time in the world to perform noise characterization of transistors by the use of an in-situ tuner* This thesis has led to two Ph.D. theses “in-situ Load-Pull” and “Noise” measurement and one patent

Grenoble Area, France

#Title:Design a tunable rectangular waveguide bandpass filter (200-300 GHz) for millimeter wave applications and Radio AstronomyDuties:- Modeled the waveguide filter through MathCAD 12 "exploited Maxwell’s equations"- Verified the model by electromagnetic simulation on CST- Interacted many times with the mechanical lab for the realization of the filter- Performed the scattering parametermeasurement- Used the filter in the head of one of the radio telescope of the “Plateau de Bure”

Lille Area, France

#Title:Set up an Rx / Tx communication system+ These projects include the RF-design, the clean room's realization and the measurement of all the building block.+ Applied electrical engineering theory, and semiconductor’s physics for active and passive components.Duties: + Designed- hybrid Low Noise Amplifier (LNA) @ 7.1 GHz- hybrid Class B Power Amplifier (PA) @ 7.1 GHz- Dielectric Resonator Oscillator (DRO) @ 6.2 GHz- Microstrip couple line bandpass Filter @ 6.2 GHz+ Measured- VNA measurement of the Gain, the noise and the matching of the LNA- IP3, Gain Compression of the PA - Performed Phase Noise measurement of the DRO- Performed the S parameter of the Filter+ Realized a HEMT transistor on Clean Room, + Performed on-wafer measurement, and modeled the HEMT transistor

Lille Area, France

#Title:Understanding the MOSFET theory by SILVACO simulationDuties:- Handling of SILVACO, - Study of the MOSFETs' behavior by the use of SILVACO software Simulation- Electrical simulation of the MOSFET devices, breakdown, and leakage- Managed the drift-diffusion and energy balance transport equations- DC and AC simulation

Ph.D., Electrical Engineering, Dr

Ph.D. Thesis entitled : " Characterization's Methodology of the High Frequency 4 Noise Parameters of Advanced CMOS and HBT in Millimeter.

Master Degree Of Science In Microelectronics, Rf / Microwave Engineering

The specialities are: Microelectronics, Radio Frequency and High Frequency.

Bachelor Of Science In, Electrical Engineering