Principal investigator for DoE SBIR phase II grant. Development for low temperature annealing.

Yuanning was a major contributor among the technical staff at TI working on 65nm, 90nm, and 120nm technology manufacturing, and 65nm process development. She lead the TI wide “3-D integrated solution," a low-cost and novel technology which integrated the energy harvesting sensor with circuit processing. Among several other leadership projects, she also headed TI's work with Synopsys to simulate solar cell efficiency and fill factor using semiconductor wafers via Sentaurus device… Show more Yuanning was a major contributor among the technical staff at TI working on 65nm, 90nm, and 120nm technology manufacturing, and 65nm process development. She lead the TI wide “3-D integrated solution," a low-cost and novel technology which integrated the energy harvesting sensor with circuit processing. Among several other leadership projects, she also headed TI's work with Synopsys to simulate solar cell efficiency and fill factor using semiconductor wafers via Sentaurus device simulator. Included among other cost-reductive and novel technologies she developed are a new 65nm loop pilot qual that resulted from troubleshooting the AMAT Vantage software issues. Also the disilane poly process for advanced CMOS technology, smaller grain poly, and a new recipe to reduce the pattern loading effect in silicon nitride. Show less

Several findings were recorded as a result of Yuanning's R&D work involving 0.12, 0.16, 0.18 and 0.25 micron technology process development. One major contribution included the characterization of transistor and gate oxide performance and reliability by using graded-grown-gate (G3) recipe. After this work, G3 became the primary path of Lucent Technologies / Agere in 0.16µm, 0.12µm., and two US patents applications were filed.