黃冠寧 Email & Phone Number

● On-site representative for MOCVD epitaxy R&D products/programs and manufacturing operations.● Provided technical support and FAE (Field Application Engineer) services to clients.● Developed various GaN based materials, including:1. 6 and 8-inch III-V group GaN devices (GaN on Si, GaN on QST, GaN on Sapphire) for power applications ranging from 100 to 650V. 2. 2D material WS2 thin-film growth on 6＂sapphire and SiO2 substrate.3. 4 and 6-inch blue and green LEDs for microLED applications.4. UVC deep ultraviolet epitaxial processes.● Offering technical support to customers and work closely with the sales and FAE teams to collect market technique trends, and propose new product specifications.Journal papersK.N. Huang, YC. Lin, JC. Lin, et al. Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications. J. Electron. Mater. 49, 1348–1353 (2020).K.N. Huang, Y.C. Lin, J. H. Lee, et al. Study of tri-gate AlGaN/GaN MOS-HEMTs for power application, Micro and Nano Engineering, Volume 9, 2020. K.N. Huang, Y.C. Lin , C.Y. Wu, et al. Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications. J. Electron. Mater. 52, 2865–2870 (2023).W.C. Wu, K.N. Huang, C.Y. Su, et al. Wafer-scale MOCVD grown WS2 with normally off transistor behavior and its general application on different amorphous substrates. Appl. Phys. Lett. Volume 123 (18), 2023.

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  Assistant Manager

  Hermes-Epitek Corporation Pte Ltd