杜文仙 Email & Phone Number

1. Master degree at NCTU : (2 years)Thesis: Simulation of nitride base flash memory and its applicationTwo conference papers:．Overall Operation Considerations for a SONOS-based Memory, VLSI-TSA, 2009．Cell Endurance Prediction from a Large-area SONOS Capacitor, IRPS, 20092. PhD. degree at NTU: (5 years)Thesis: Heteroepitaxy Ge/Si and Dopant Incorporation by Chemical Vapor Deposition Four journal papers: ．Junctionless Gate-all-around PFETs using in-situ Boron Doped Ge channel on Si, IEEE Transaction on Nanotechnology, 2015 ．The PN Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping, IEEE Trans. Electron Device, Vol. 61, No. 7, pp. 2595-2598, 2014．A transition of three to two dimensional Si growth on Ge (100) substrate, J. Appl. Phys, 2012．Ge out diffusion effect on SiGe nanoring formation, J. Appl. Phys, 2012Thirteen conference papers including 3 IEDM developed by team．In-situ Doped and Tensily Stained Ge Junctionless Gate-all-around nFETs on SOI Featuring Ion = 828 uA/um, Ion/Ioff ~ 1E5, DIBL= 16-54 mV/V, and 1.4X External Strain Enhancement, IEDM, 2014．Triangular-channel Ge NFETs on Si with (111) Sidewall-Enhanced Ion and Nearly Defect- free Channels, IEDM, 2012．Nearly Defect-free Ge Gate-All-Around FETs on Si Substrates, 20113. Start-up special research and develop project at TSMC F12B EPI team from N7 to present (N3) using novel chemical (XPS, APT, EELS, HR X-ray RSM, etc) and electrical analysis. (2017 Q1~present)4. Achieve DC gain 1~2% of N7 and 1~0.9% of N5 N/P FinFET using novel EPI process5. Joint one-team support with ATMD EPI for N3 N FinFET (2020 Q3~2021 Q2)6. 2020 TSMC DOE symposium 2nd award7. four patents have been issued , and one is drafting．Stressors using Fltattern layer by lateral growth, US 16/516,171 Jul. 2019．Novel eptaxial structure for laser anneal, US 16/557,372 Oct. 2019．Novel FinFET Source and Drain structure and method, US 16/901,603 Jun. 2020．Novel Fin structure with asymmetry EPI Source/Drain, US filed, 2021．Novel epitaxy structure for nano-sheet device, Drafting, 2021

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  國立臺灣大學

  Electrical, Electronic And Communications Engineering Technology/Technician