전상진 Email & Phone Number

Hwaseong-Si

I am in charge of core technology development for PEALD equipment.Mian development items are RF system, RF filter, AlN heater and next generation chamber.

화성사업장

2014.04- till now Samsung Electronics, Memory Manufacturing Operation CenterEquipment special team- CIP and analysis of equipments and process to improve the yield of chip production- Tool matching for DRAM/VNAND production2002.09- 2014.03 Samsung Electronics, Manufacturing Technology CenterProject of damage free etcher (2013.03 - 2014.03)- Development of remote plasma source for the process of highly selective etching of SiO2/SiN/PolyProject of LCD CVD equipment (2013.03 - 2014.03)- Development of quad-feed RF system to improve the deposition uniformity of 7th generation LCD CVD equipmentProject of poly etcher equipment (2009.10 - 2013.03)- Development of tunable ICP plasma source to control the etch profile of wafer center-to-edge- ICP source design to reduce the sputtering energy on the dielectric window for preventing the particle generation- Development of the sync-pulse RF system for the next-generation equipment- Improvement of the asymmetric etching profile by finding out root-cause and shielding external sourceProject of oxide etcher equipment (2009.10 - 2013.03)- Development of the top/bottom sync RF system (100MHz) for the CCP chamber- Development of the pulse RF systemMicrocrystal Si deposition for solar cell (2007.08 - 2009.12)- Development of MCS (multi core source) to achieve high deposition rate and high cell efficiency for the large area microcrystal Si deposition HDPCVD (2002.09 - 2007.12)- Development of 5kW ICP plasma source for the 200mm wafer of the STI gap-fill and passivation process- Development of 10kW ICP plasma source for the 300mm wafer of the STI gap-fill and passivation process- Development of the dual frequency source (Top 13.56MHZ ICP+ side 2MHz ICP)- Deal with the issues of chamber wall arcing and antenna arcing

박사학위, 물리학

학사, 물리학