Endurance Semiconductors

Endurance Semiconductors is a spin-out from the Tyndall Research Centre in Cork, Ireland, with a mission to transform the power electronics industry through the adoption of 3C-SiC technology. 3C-SiC/Si, or Cubic Silicon Carbide grown epitaxially on a low-cost silicon substrate, is a next-generation wide-bandgap (WBG) semiconductor material that delivers exceptional electrical performance compared to traditional silicon. Like other WBG materials that are replacing silicon in power conversion and conditioning systems, 3C-SiC enables significantly higher power efficiency, contributing to the reduction of global greenhouse gas emissions. However, 3C-SiC surpasses conventional SiC (4H-SiC) in key electronic properties, offering improved device performance at a lower manufacturing cost. By replacing expensive 4H-SiC substrates with standard silicon wafers, 3C-SiC technology further drives down costs, making it the most cost-effective and high-performance solution for power conversion and conditioning system designers.