Ferroelectric Memory Company

Ferroelectric Memory Company company information, Employees & Contact Information

FMC – The Ferroelectric Memory Company solves one of the most important hardware challenges in the age of Internet-of-Things. Fabless companies as well as semiconductor manufacturers are nowadays looking for embedded nonvolatile memory solutions (eNVM) that enable products like microcontrollers (MCU) to follow Moore’s law. However, legacy eNVM solutions like eFlash cannot provide cost effective solutions that are so in need for the age of IoT. FMC commercializes a disruptive material innovation that will solve this problem for current and future technology nodes, i.e. eNVM based on ferroelectric hafnium oxide (FE-HfO2). The unexpected physical effect of ferroelectricity in HfO2 allows for the transformation of classical high-k metal-gate (HKMG) transistors into nonvolatile ferroelectric field effect transistors (FeFET). In this way, MCUs can easily be scaled from e.g. 65 nm down to 28 nm and beyond enabling tremendous advantages for the overall system: SoC cost reduction of around 80%, per bit write energy reduction by a factor of 1000 and an overall performance gain of the system of around 70% due to the transition to advanced process nodes. Due to the close relation of FeFET and CMOS baseline, there is no roadblock for FMC’s technology to be applied to cutting-edge technology nodes like 22 nm FDSOI, 1X nm FinFET and beyond.

Company Details

Employees
45
Founded
-
Address
Charlotte-Bühler-Straße 12, Dresden,sachsen 01099,germany
Phone
+49 15201344014
Email
in****@****ory.com
Industry
Semiconductor Manufacturing
NAICS
Semiconductor and Other Electronic Component Manufacturing
HQ
Dresden, Sachsen
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News

Unified memristor-ferroelectric memory developed for energy-efficient training of AI systems - Tech Xplore

Unified memristor-ferroelectric memory developed for energy-efficient training of AI systems Tech Xplore

FMC, Neumonda team up to sell DRAM+ memory ... - eeNews Europe

FMC, Neumonda team up to sell DRAM+ memory ... eeNews Europe

Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS - Nature

Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS Nature

Fraunhofer teams for 300mm ferroelectric memory AI devices ... - eeNews Europe

Fraunhofer teams for 300mm ferroelectric memory AI devices ... eeNews Europe

Ferroelectric RAM looking rusty and stuck - Blocks and Files

Ferroelectric RAM looking rusty and stuck Blocks and Files

Ferroelectric Memories Answer Call For Non-Volatile Alternatives - Semiconductor Engineering

Ferroelectric Memories Answer Call For Non-Volatile Alternatives Semiconductor Engineering

Ferroelectric Memory GmbH (FMC) Raises $20 Million to Accelerate Next-Generation Memory for AI, IoT, Edge Computing, and Data Center Applications - PR Newswire

Ferroelectric Memory GmbH (FMC) Raises $20 Million to Accelerate Next-Generation Memory for AI, IoT, Edge Computing, and Data Center Applications PR Newswire

Ferroelectric Memory raises $20 million for embedded non-volatile memory tech - Data Center Dynamics

Ferroelectric Memory raises $20 million for embedded non-volatile memory tech Data Center Dynamics

Aluminum scandium nitride films: Enabling next-gen ferroelectric memory devices - EurekAlert!

Aluminum scandium nitride films: Enabling next-gen ferroelectric memory devices EurekAlert!

Effect of Charge Injection on the Switching Speed of Ferroelectric Memory Based on HfO2 - ACS Publications

Effect of Charge Injection on the Switching Speed of Ferroelectric Memory Based on HfO2 ACS Publications

CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory - Science | AAAS

CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory Science | AAAS

A ferroelectric fin diode for robust non-volatile memory - Nature

A ferroelectric fin diode for robust non-volatile memory Nature

Ferroelectric Memories: The Middle Ground - Semiconductor Engineering

Ferroelectric Memories: The Middle Ground Semiconductor Engineering

Researchers enhance performance of hafnia-based memory devices by doping ferroelectric materials with aluminum - Tech Xplore

Researchers enhance performance of hafnia-based memory devices by doping ferroelectric materials with aluminum Tech Xplore

Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer | ACS Nano - ACS Publications

Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer | ACS Nano ACS Publications

SK Hynix backs Germany's ferroelectric memory startup ... - eeNews Europe

SK Hynix backs Germany's ferroelectric memory startup ... eeNews Europe

Self-selective ferroelectric memory realized with semimetalic graphene channel - Nature

Self-selective ferroelectric memory realized with semimetalic graphene channel Nature

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing - Nature

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing Nature

ferroelectric memory with Mica substrate via SrTiO - Nature

ferroelectric memory with Mica substrate via SrTiO Nature

Ferroelectric symmetry-protected multibit memory cell - Scientific Reports - Nature

Ferroelectric symmetry-protected multibit memory cell - Scientific Reports Nature

Ferroelectric Transistors for Memory and Neuromorphic Device Applications - Wiley

Ferroelectric Transistors for Memory and Neuromorphic Device Applications Wiley

New Type Of Ferroelectric Memory Constructed Using α-In2Se3 Material - Hackaday

New Type Of Ferroelectric Memory Constructed Using α-In2Se3 Material Hackaday

CMOS-compatible 3-D ferroelectric memory with ultralow power and high speed - Tech Xplore

CMOS-compatible 3-D ferroelectric memory with ultralow power and high speed Tech Xplore

Non-volatile memory based on the ferroelectric photovoltaic effect - Nature

Non-volatile memory based on the ferroelectric photovoltaic effect Nature

Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes - Nature

Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes Nature

Uniform Crystal Formation and Electrical Variability Reduction in Hafnium-Oxide-Based Ferroelectric Memory by Thermal Engineering - ACS Publications

Uniform Crystal Formation and Electrical Variability Reduction in Hafnium-Oxide-Based Ferroelectric Memory by Thermal Engineering ACS Publications

Next-generation ferroelectric domain-wall memories: principle and architecture | NPG Asia Materials - Nature

Next-generation ferroelectric domain-wall memories: principle and architecture | NPG Asia Materials Nature

High-speed 3-D memory with ferroelectric NAND flash memory - Tech Xplore

High-speed 3-D memory with ferroelectric NAND flash memory Tech Xplore

Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode - Nature

Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode Nature

CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm - Nature

CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm Nature

Demonstration of 1 V Reliable FeRAM Operation: V - ACS Publications

Demonstration of 1 V Reliable FeRAM Operation: V ACS Publications

Graphene/lead-zirconate-titanate ferroelectric memory devices with tenacious retention characteristics - ScienceDirect.com

Graphene/lead-zirconate-titanate ferroelectric memory devices with tenacious retention characteristics ScienceDirect.com

(PDF) Ferroelectric HfO2-based materials for next-generation ferroelectric memories - researchgate.net

(PDF) Ferroelectric HfO2-based materials for next-generation ferroelectric memories researchgate.net

Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations - Nature

Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations Nature

Fabrication Strategies of Metal–Ferroelectric–Insulator–Silicon Gate Stacks Using Ferroelectric Hf–Zr–O and High-k HfO - ACS Publications

Fabrication Strategies of Metal–Ferroelectric–Insulator–Silicon Gate Stacks Using Ferroelectric Hf–Zr–O and High-k HfO ACS Publications

Inside story of ferroelectric memories - Nature

Inside story of ferroelectric memories Nature

Smart Design of Fermi Level Pinning in HfO2‐Based Ferroelectric Memories - Wiley

Smart Design of Fermi Level Pinning in HfO2‐Based Ferroelectric Memories Wiley

Optoelectrical Molybdenum Disulfide (MoS2)—Ferroelectric Memories | ACS Nano - ACS Publications

Optoelectrical Molybdenum Disulfide (MoS2)—Ferroelectric Memories | ACS Nano ACS Publications

Material scientists build ferroelectric memory device based on light response - Phys.org

Material scientists build ferroelectric memory device based on light response Phys.org

Novel Lateral Data Storage: Two-Dimensional Ferroelectric Semiconductor Memory with a Bottom Contact 100 nm Channel Using In-Plane Polarization - titech.ac.jp

Novel Lateral Data Storage: Two-Dimensional Ferroelectric Semiconductor Memory with a Bottom Contact 100 nm Channel Using In-Plane Polarization titech.ac.jp

Understanding the Nature of Ultrafast Polarization Dynamics of Ferroelectric Memory in the Multiferroic BiFeO3 - Wiley

Understanding the Nature of Ultrafast Polarization Dynamics of Ferroelectric Memory in the Multiferroic BiFeO3 Wiley

spect and Cha llenges of Hafnium Oxide in Resistive Switching and - researchgate.net

spect and Cha llenges of Hafnium Oxide in Resistive Switching and researchgate.net

What are Ferroelectric Memories(FeRAM) - Techovedas

What are Ferroelectric Memories(FeRAM) Techovedas

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