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NaMLab gGmbH is a non-profit research organization and associated institute of the Technical University (TU) Dresden with focus on materials for electronic devices. Material development at NaMLab commonly proceeds under the constraints of the target electron device. The focus of the material development is therefore highly integration and application driven. Historically NaMLab was founded as a joint venture between Infineon Technologies AG memory products division (later Qimonda) and the Technical University Dresden. Therefore in the first years the research activities were focused on future high-k materials for capacitors in dynamic random access memories (DRAM). After the step-out of the industrial partner mid 2009 this key know-how was transformed to other devices and application fields. Today NaMLab employs these core competences to develop new device concepts in two central fields: Re-Configurable Devices and Energy Efficiency Devices. Re-Configurable Devices aim at electronic solutions beyond the possibilities of leading edge CMOS devices according to Moore´s Law. Re-programmable silicon-nanowire transistors , memristors and a new type of ferroelectric field-effect transistor based on doped hafnium oxide are the dominant topics in this field. In Energy Efficiency Devices NaMLab works at the frontier of research for solutions which reduce the power consumption of electronic devices and increase the overall energy conversion efficiency in entire electronic systems.
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Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction - ACS Publications

Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction ACS Publications

Neuromorphic devices based on fluorite‐structured ferroelectrics - Lee - 2022 - InfoMat - Wiley Online Library

Neuromorphic devices based on fluorite‐structured ferroelectrics - Lee - 2022 - InfoMat Wiley Online Library

Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses - ACS Publications

Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses ACS Publications

Germanium outperforms silicon in energy efficient transistors with n- und p- conduction - EurekAlert!

Germanium outperforms silicon in energy efficient transistors with n- und p- conduction EurekAlert!

Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2 - Xu - 2024 - Advanced Functional Materials - Wiley Online Library

Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2 - Xu - 2024 - Advanced Functional Materials Wiley Online Library

Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics - ACS Publications

Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics ACS Publications

Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers - ACS Publications

Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers ACS Publications

Insights into the Temperature-Dependent Switching Behavior of Three-Gated Reconfigurable Field-Effect Transistors - Wiley Online Library

Insights into the Temperature-Dependent Switching Behavior of Three-Gated Reconfigurable Field-Effect Transistors Wiley Online Library

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing - ACS Publications

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing ACS Publications

Modulation Doping of Silicon Nanowires to Tune the Contact Properties of Nano-Scale Schottky Barriers - Wiley Online Library

Modulation Doping of Silicon Nanowires to Tune the Contact Properties of Nano-Scale Schottky Barriers Wiley Online Library

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material - ACS Publications

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material ACS Publications

Negative Capacitance for Electrostatic Supercapacitors - Hoffmann - 2019 - Advanced Energy Materials - Wiley Online Library

Negative Capacitance for Electrostatic Supercapacitors - Hoffmann - 2019 - Advanced Energy Materials Wiley Online Library

Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2 - Wiley Online Library

Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2 Wiley Online Library

Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric - Martin - 2014 - Advanced Materials - Wiley Online Library

Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric - Martin - 2014 - Advanced Materials Wiley Online Library

Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2‐Based Films - Wiley Online Library

Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2‐Based Films Wiley Online Library

Silicon nanowires – a versatile technology platform - Wiley Online Library

Silicon nanowires – a versatile technology platform Wiley Online Library

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 - Wiley Online Library

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 Wiley Online Library

Incipient Ferroelectricity in Al‐Doped HfO2 Thin Films - Mueller - 2012 - Advanced Functional Materials - Wiley Online Library

Incipient Ferroelectricity in Al‐Doped HfO2 Thin Films - Mueller - 2012 - Advanced Functional Materials Wiley Online Library

Back to the roots: Germanium outperforms silicon in energy efficient transistors with n- und p- conduction - TU Dresden

Back to the roots: Germanium outperforms silicon in energy efficient transistors with n- und p- conduction TU Dresden

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