TIFR Semiconductor Optoelectronics

Our core expertise is in the epitaxial growth of compound semiconductors via a technique called metalorganic vapour phase epitaxy (MOVPE). Our lab has two MOVPE systems, a horizontal reactor for As/P materials and a 3x2” closed-coupled showerhead MOVPE system used mainly for III-Nitrides. We study the structural, optical and electrical properties of both bulk and low-dimensional III-V semiconductors (quantum wells/ wires/dots) using and have access to a wide range of characterization techniques such as high-resolution X-ray diffraction, photoluminescence and Raman spectroscopies, and electron microscopy.