Worked principally on refining the hydrogen plasma environment to eliminate some of the drawbacks of plasma ion immersion implantation (PIII) such as etching of substrates due to plasma soaking in addition to implanting ions. Improved reliability of the plasma environment by extending times between chamber cleaning. Also involved in developing an inexpensive HV modulator (MOSFET & thyristor switch based) to help reduce the equipment costs.

Developed engineering substrates involving either transferring single crystal films onto substrates such as in SOI or SOQ or cleaving free-standing films such as in silicon solar cells. The latter required the engineering of process end stations to be coupled to various types of accelerators, typically linear such as radio frequency quadrupole and dc accelerators. The intense radiation environment required careful design & diagnostics to protect personnel & equipment. Earlier worked involved optimizing high density plasmas used in plasma ion immersion implanters (PIII) in which high voltage pulsed plasmas implanted essentially pure proton species. At the same time, did characterization and process optimization of low density plasmas used in plasma activation as an integral part of bonding used in SOI etc.

Played critical role in developing numerous plasma etch sources from multi-frequency plasma and magnetrons, to initiating the very successful inductively-coupled (TCP) polysilicon plasma. Had critical role in the development of the 200mm silicon dioxide TCP etcher by antenna design and operation as well as solving some very serious chamber issues such as etch uniformity problems through gas distribution design.

Optimized CO2 laser cavity for FM RF waveguide lasers. Designed test stations for the alignment during manufacture of various neodymium-YAG Q-switched laser range finders. Also designed station to adjust focus of the world's first zoom FLIR.