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Ankit Soni Email & Phone Number

Principal GaN Device Engineer at Nexperia
Location: Manchester Area, United Kingdom 7 work roles 2 schools
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Current company
Role
Principal GaN Device Engineer
Location
Manchester Area, United Kingdom
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Ankit Soni is listed as Principal GaN Device Engineer at Nexperia, a with 1944 employees, based in Manchester Area, United Kingdom. AeroLeads shows a matched LinkedIn profile for Ankit Soni.

Ankit Soni previously worked as Development Engineer (GaN) at Nexperia and Princ Eng Technology Development at Globalfoundries. Ankit Soni holds Doctor Of Philosophy - Phd, Design Of Gan Based Rf And High Power Hemt/Diodes from Indian Institute Of Science (Iisc).

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Nexperia

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About Ankit Soni

Over 9 years of hands-on experience with GaN-based devices, specializing in power applications. Currently leading multiple technology development projects as a key member of the GaN R&D team at Nexperia. Robust understanding of GaN technology, focused on developing test methods, ensuring adherence to industry standards, and navigating the intricacies of production environments. Proficient in Sentaurus TCAD process and device simulations, and extensive experience of clean room fabrication and characterization. Strong device physics background and understanding of GaN reliability.Successfully completed multiple projects on power HEMTs and diodes as one of the lead members of the device design team. Instrumental in technology development for 600V E-mode HEMT technology at IISc.

Listed skills include Proteus, Powerpoint, Tanner Eda, Cadence Virtuoso, and 16 others.

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Nexperia
Nexperia
Principal GaN Device Engineer
netherlands
Website
Employees
1944
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7 roles · 12 years

Ankit Soni work experience

A career timeline built from the work history available for this profile.

Principal Gan Device Engineer

Current

Manchester Area, United Kingdom

May 2024 - Present

Development Engineer (Gan)

Manchester, England, United Kingdom

Oct 2022 - Apr 2024

Princ Eng Technology Development

Bengaluru, Karnataka, India

Feb 2021 - Jun 2022

Postgraduate Student

Bengaluru, Karnataka

Development of computational framework and design strategies for GaN-based High Electron Mobility Transistors (HEMT) and Diodes. The physics-based modelling has enabled the way for predicting accurate device behaviour and performance optimization of GaN-based devices. Work on computational analyses of HEMT has helped to devise optimum design guidelines for mm-wave and THz applications. Demonstrated a novel field plate design for maximizing the breakdown voltage and improving the RF performance… Show more Development of computational framework and design strategies for GaN-based High Electron Mobility Transistors (HEMT) and Diodes. The physics-based modelling has enabled the way for predicting accurate device behaviour and performance optimization of GaN-based devices. Work on computational analyses of HEMT has helped to devise optimum design guidelines for mm-wave and THz applications. Demonstrated a novel field plate design for maximizing the breakdown voltage and improving the RF performance of the power amplifier. Performed systematic studies of breakdown phenomena in high voltage HEMTs, and proposed field plate design rules for optimum device performance. Key contributor towards the development of e-mode GaN HEMT for 600V applications using novel dielectric engineering. Experienced on design, characterization and fabrication of AlGaN/GaN-based diodes. Proposed a methodology to engineer the Schottky interface in order to maximize the diode on-state and breakdown performance. Worked towards the design of AlGaN/GaN power and AlN/GaN RF Schottky Diodes. Show less

2015 - Feb 2021

Research Assistant

Bangalore, India

Worked at Advanced Nanoelectronics Lab, Department of Electronic Systems Engineering (DESE). The position involved the development of TCAD simulation strategy and design of GaN HEMT devices. I was also tasked with the optimization of the fabrication process for 40V-5A GaN HEMT device.

May 2014 - Jun 2015

Summer Research Intern

Gadanki, A.P., India

Performed the comparative analysis Atmospheric Radars- MST Radar and Active phase array MST radar, considering aspects such as circuit designing and its’ working. Successfully learned about testing and architecture of radar components and to calculate atmospheric parameters like wind velocity, wind variation patterns etc.

May 2012 - Jun 2012

Summer Trainee

Noida Area, India

Practical training on Robotics, Image Processing using MATLAB and Embedded systems

May 2011 - Jun 2011
Team & coworkers

Colleagues at Nexperia

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2 education records

Ankit Soni education

FAQ

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What company does Ankit Soni work for?

Ankit Soni works for Nexperia.

What is Ankit Soni's role at Nexperia?

Ankit Soni is listed as Principal GaN Device Engineer at Nexperia.

Where is Ankit Soni based?

Ankit Soni is based in Manchester Area, United Kingdom while working with Nexperia.

What companies has Ankit Soni worked for?

Ankit Soni has worked for Nexperia, Globalfoundries, Indian Institute Of Science (Iisc), National Atmospheric Research Laboratory, Dept. Of Space, Govt. Of India, and Nextsapiens.

Who are Ankit Soni's colleagues at Nexperia?

Ankit Soni's colleagues at Nexperia include Johnny Wu, John Ely Barcelona, Nantha Kumar, Kelvin Saes Rc, and Wj_Tan Jing.

How can I contact Ankit Soni?

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What schools did Ankit Soni attend?

Ankit Soni holds Doctor Of Philosophy - Phd, Design Of Gan Based Rf And High Power Hemt/Diodes from Indian Institute Of Science (Iisc).

What skills is Ankit Soni known for?

Ankit Soni is listed with skills including Proteus, Powerpoint, Tanner Eda, Cadence Virtuoso, Linux, C, Orcad Capture Cis, and Windows.

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