Sciencific and technological Law Reseatcher

Senior engineer at department of physical failure analysis. Excellent in Dynamic Random Access Memory (DRAM) device failure defects analysis at a fix target by means of TEM, SEM, FIB, XRD, Ion-Miller skills and technologies. Samples for cross section and plain view of TEM observation were prepared by the FIB instrument before hand-polishing. Eventually, the suggestions and improvement of experimental processes that aimed at diminishing the influence of defects were approved after we communicated with customers very actually and efficiently.The work were finished 50-70 Cases per month very frequently and helped my company to get the opportunity of an alliance with international industry association.

Engineer at department of Low Temperature Thin Film Transistor Liquid Crystal Display (LT-TFT-LCD) in Electronics & Optoelectronics Research Laboratories. Amorphous Si between ITO and base layer can be controlled the grain growth behavior by laser pulse. Before Si grain observation of SEM, the plate need to be diamond cut, acid etch in the clean room. My candidate succeeded in resolving the problem of crystal growth controlled.