Dolar Khachariya Email & Phone Number

Cary, North Carolina, United States

Raleigh-Durham, North Carolina Area

PhD in Electrical Engineering at NC State University. Advised by Prof. Spyridon Pavlidis and co-advised by Prof. Zlatko Sitar and Prof. Ramon Collazo. Major responsibilities are the design, simulation, fabrication, and characterization of III-Nitride-based high-power devices. My thesis topic is centered around developing vertical GaN-based Superjunction devices using the lateral polar junction (LPJ) approach. To obtain that, the project is broken down into several smaller building blocks, such as the design, fabrication, and testing of nitrogen-polar GaN Schottky, PN, and camel diodes.In addition, I am working on developing few other projects with my peers such as:- High AlGaN HEMTs for high-power and high-frequency applications- GaN PN and JBS diodes using Mg ion implantations- n-type doping AlN via Si ion implantationsI work closely with the material scientists to provide feedback via electrical testings of their grown materials for the devices. This helps in yielding high-quality material and high-performing devices. During my stay at NCSU, I gained knowledge and experience in designing and simulating devices, the growth of the material, cleanroom processing to fabricate devices, different electrical characterization techniques to test and validate device performances.

Cary, North Carolina, United States

Providing support to small business innovation research (SBIR) projects funded by the DoE, DoD, and NSF to develop III-nitride high-power and optoelectronics devices. As an R&D engineer (part-time), my responsibilities are to design and fabricate vertical GaN power diodes, High AlGaN based avalanche photodiodes, and UV LEDs & laser diodes (e.g., lithography, etching, metal depositions, contact annealing, etc.) and then characterize them from room-temperature to very high-temperature (>500C) current-voltage (I-V) and capacitance-voltage (C-V) characteristics.

Mumbai Area, India

As a JRF under Prof. Saurabh Lodha, I worked on the "Carrier Selective contacts for Solar cells using Transition Metal Oxides and Amorphous Silicon" project. My responsibilities were to develop recipes for ALD-based transition metal oxides and PECVD based amorphous silicon and quantify them via ellipsometry.

Switzerland

As an intern, I worked on simulation and fabrication of GaN-based vertical power devices

Mumbai Area, India

Fabricated and characterized AlGaN/GaN-based fringe field nanowire transistors

Mumbai Area, India

As an M.Tech student, advised by Prof. Dipankar Saha, I fabricated and characterized AlGaN/GaN-based conventional and nanowire transistors. Gained knowledge and hands-on experience on different fabrication tools and techniques in the cleanroom such as e-beam lithography, metal depositions, reactive ion etching, plasma CVDs, contact annealing, secondary electron microscopy.

Ahmedabad Area, India

As an undergraduate thesis intern, I worked on simulation and fabrication of ultra-wide bandgap microstrip patch antennas.

Doctor Of Philosophy - Phd, Electrical Engineering, 4.0/4.0

Thesis Title: A Path Towards GaN-based Vertical Superjunction Devices

Master Of Technology (M.Tech.), Microelectronics (Vlsi), 9.4/10

Thesis Title: AlGaN/GaN High Electron Mobility Transistors

B.Tech, Electronics And Communications Engineering, 83/100