Jun Hee Lee Email & Phone Number

Evanston, Illinois, United States

• Dedicated to investigating ultra-wide bandgap semiconductors, with a primary focus on novel metal oxides (i.e. Ga2O3) and a secondary interest in III-Nitrides (i.e. AlN, AlGaN, GaN) using epitaxial growth techniques.
• Examined and analyzed the effects of MOCVD growth parameters such as growth temperature, pressure and different precursors to produce epitaxial Ga2O3 layers with low defect density; Introduced novel techniques.
• Introduced AlOx interlayer method to facilitate the epitaxial growth of Ga2O3/III-Nitride heterostructures, overcoming the challenge of large lattice mismatch between the two material systems and effectively addressing.
• Explored and assessed the influence of hydrogen (H2) and nitrogen (N2) on MOCVD-grown Ga2O3 epilayers; The quantity of H2 plays a pivotal role in determining both the quality and polymorph of Ga2O3, while the presence.
• Investigated and analyzed MOCVD-grown epilayers through comprehensive structural, optical, and electrical characterization measurement techniques including Atomic Force Microscope (AFM), Scanning Electron Microscope.

• (a)Device Fabrication and Characterization in Opto-/Electronic Devices
• Engineered opto-/electronic devices, such as Metal-Semiconductor-Metal (MSM) diodes, PN diodes, and transistors and conducted comprehensive analyses of device characteristics, including output and transfer IV curves.

• Dedicated to optimizing the performance of fabricated electronic devices, particularly thin-film transistors (TFTs), utilizing metal oxide semiconductors such as In2O3, ZnO, and IGZO. Deposition methods primarily.
• Identified surface oxidation phenomenon during annealing process as an effective method for eliminating various defects, particularly within the top 5 nm of thin films. This observation led to the development of.
• Designed new TFT arrays and mesa structure using AutoCAD to enhance the performance of semiconductor devices. Systematically optimized critical steps in the semiconductor device fabrication processes including.
• Estimated the quality of metal oxide thin films through comprehensive characterization measurement techniques including AFM, Grazing Incidence XRD (GI-XRD), X-ray Reflectometry (XRR) and X-ray Photoelectron.

• (a)Investigation in impacts of Atmosphere Plasma Treatment
• Provided support to examine effects of Atmosphere Plasma Treatment on solution-processed metal oxide thin-film transistors Publication: (1) Effective Atmospheric-Pressure Plasma Treatment toward High-Performance.
• Assisted to form various types of precursors and provided support in the synthesis of dataPublication: A systematic study on effects of precursors and solvents for optimization of solution-processed oxide semiconductor.

• (a)Modeling new type of Non-Volatile Memory
• Assisted the research project on modeling of metal oxide-resistive memory (RRAM/ReRAM) using graphene-edge electrodes
• Analyzed electrical characteristics of the RRAM with graphene-edge electrodes and contributed to developing electrical characteristic equations(b)Designing MIPS CPU for improved operation
• Designed Microprocessor without Interlocked Pipeline Stages Center Processing Unit (MIPS CPU) with enhanced branch predictor and performed from Front End to Place and Route of Back End

• Developed strong interpersonal and communication skills through daily interactions with diverse groups
• Demonstrated leadership as a squad leader, supervising a team of 13 soldiers
• Conducted various tasks and received awards/recognition for outstanding performance while leading the team

Doctor Of Philosophy - Phd, Electrical Engineering

Master'S Degree, Nano Science And Technology

Bachelor'S Degree, Electronics And Radio Engineering

Exchange Student, Communication And Media Studies