Kun Xing Email & Phone Number

As an electronic engineer working on III-nitride-based LEDs, I have:6 years' experience in MOCVD epitaxial growth of semi-polar and non-polar III nitride materials;4 years' experience in fabrication of GaN-based micro-/nano-structure devices and LEDs;4 experience in film depositions and dry/wet etching related technologies including PECVD, mask aligner, evaporator, sputter, RTA, RIE, ICP;6 years' experience in relevant characterization techniques such as XRD, AFM, SEM, PL.

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  Postdoctor/Research Associate

  The University Of Sheffield

  Aug 2014 - Present - Sheffield, United Kingdom

  My research aims at achieving high optical efficiency of gallium nitride (GaN) based semiconductor LEDs emitting at various wavelengths ranging from ultraviolet to visible light. This is realized by performing MOCVD epitaxial growth of GaN based materials on non-native sapphire substrates, followed by growth and fabrication of LED structures.So far, we have achieved significantly improved crystal quality of semi-polar GaN , leading to massively enhanced optical efficiency of GaN-based blue, green and yellow LEDs.