Leon Chang Email & Phone Number

Hsinchu City, Taiwan, Taiwan

• Nor flash: Developing embedded 2T p- flash and stand-alone 1T n-flash.• NAND flash development• Cell/ HV/ Core device designer• Create and maintain commend files (drc/ sizing table/ lvs)• Design and draw Testkey by Virtuoso• Tape out flow, include drc errors check/ JDV check.• Work with foundries and PE/ designer to troubleshooting process/ device/ CP/ reliability issues. • Project: Pxxx foundry 0.11um embedded 2T p-flash development:  Successfully developed 0.11um embedded 2T p-flash into the foundry’s logic process. Ramp up the CP1/2 yield from 0 to an average of over 80% during the pilot run in total 4 shuttles. Pass the formal qualification and release 0.11um embedded 2T p-flash planform to foundry. • Project: 45nm 1T n-flash products development in S foundry: Testkey is workable at TQV wafer.  Reduced current leakage and increased cell BVDSS to nearly 6V to solve the difficult programming issue in pilot-run state by adding the additional SAS mask/ pocket imp to replace cell pocket imp. Pilot lot product function error elimination is in progress.• Project: 50nm 1T n-flash product development in X foundry: Thicken ONO and FG to solve WL leakage is due to the CG too close to AA surface.  Reduce E-filed by Cell LDD profile to solve BL leakage after cycling Pass the formal qualification and successful mass production.• Project: 28nm NAND flash product development in P foundry: Evaluate specifications of RDL for suppressing bonding crack. 1st Product trial run and WAT meet target. Logic issues are under verification• Project: Automotive grade qualification successful of 0.11um embedded 2T p-flash platform in H foundry Add CLDD IMP to reduce the resistance from BL to SG that lower Vgs and increase Icell by reverse read. Enlarged SG CD+10nm and lower SG Vt by cell IMP to suppress SG leakage after the reliability test.

Hsinchu

Yield engineer, 12 inch wafer factory integration department.(October 2013-November 2014)• Driving 32nm NBIT flash memory (32nm NBIT) and derivative product into mass production..• Developed and improved yield performance of 32nm NBIT form 65% to 77% at exercise run step.• Worked together with product, reliability and process departments to accomplish the pilot run of products on time.• Assisted to review and implement SPC of inline measurement and WAT.• Analyzed process window lots and module check for window consideration.Process development engineer, NBIT flash memory department (June 2012-October 2013)• Mainly placed in charge of R&D BEOL to 32nm NBIT flash memory, including Conductor / Metal line design, tuning profile, and wafer sort/ WAT testing etc..• Participated and repaired the junction engineering of Array and MOS tuning. • Issued patent: Semiconductor structure having contact structures with different aspect ratios and manufacturing method of the semiconductor structure.WAT engineer, 8 inch wafer factory integration department (July 2010-June 2012)• Setup, optimized and repaired WAT test program. • Defined and designed WAT test-key layout of 0.11 um 1.8Volt NOR flash memory (0.11 um NOR flash).• Conducted and monitored WAT of all serious products of 0.11um NOR flash, made failure rate form 0.78% to 0.32%; Cpk pass rate form 76% to 96%.

Hsinchu, Taiwan

• Integrated wafer process, yield ramp up, characteristic improvement and R & D new product etc.• Response for PECVD/ RIE/ Furnace/ CMP/ RTA tools• Project: R & D 2.5GHz Avalanche Photodetector (APD): - Successful development of 2.5G APD (Front illuminated device with 50 micron diameter active region), bandwidth achieve even more than 4.5G. - Overcame the bottleneck of capacity to improve doping process and design furnace tube, which achieved more than treble capacity than before, finally outputted over two million APD chips within six months to meet the top target.• Project: Advanced Photodetector (PD): - Shrank chip size of all serious PD products with advanced structure, that produced 1.7 times the average quantity of chips per wafer, while improved the performance of yield about 11%.