Vice Director Of Hv Product Line
Current-Super Junction MOSFET development;-HV Planar MOSFET Product development;-SiC SBD /MOSFET Development.-MOS/SBD Applications.-Marketing of HV products.
Please complete the CAPTCHA to continue
A concise factual answer block for searchers comparing this professional profile.
Max Ma is listed as Vice Director of HV Product Line at China Resources Microelectronics Limited --PDBG, based in Chengdu, Sichuan, China. AeroLeads shows a matched LinkedIn profile for Max Ma.
Max Ma previously worked as Manager-- HV Product R&D Department at Skysilicon and Power Device Section Manager at Skysilicon. Max Ma holds 工学博士, 微电子 from 重庆大学Chongqing University.
Immerse in Power device design and related process development. Such as planar VDMOSFET, trench MOSFET, super-jnction, diode, IGBT, and the MOSFET copacked with IC controller.Be interested in device develop research. A few products with high quality and patents(more than 10 patents) are the fruit of my work and encouragement to me.Goals: High performance power device develop, high reliability power device develop
Listed skills include Semiconductor Device, Igbt Development, Power Planar Vdmosfet Development, Superjunction Device Development, and 22 others.
Company context helps verify the profile and gives searchers a useful next step.
A career timeline built from the work history available for this profile.
Chongqing, China
-Super Junction MOSFET development;-HV Planar MOSFET Product development;-SiC SBD /MOSFET Development.-MOS/SBD Applications.-Marketing of HV products.
Chongqing City, China
High Voltage Product R&D:SuperJunction MOSFET --Multi-EPI&Deep Trench; Trench NPT IGBT
High Voltage Power Device development --SuperJunction platform development -- Successfully develop a novel 650V SuperJunction platform without tight EPI thx/res. control , which could reach Rsp~18-13mOhm-cm2, and nomal EAS capability .
Chengdu, Sichuan, China
Robustness of power mosfet.Integrated ESD devices and circuits design for IC protection.
Chengdu, Sichuan, China
General purpose/Standard products :low voltage advanced trench MOS develop, High voltage VDMOS develop, Schottky/ ESD integrated MOS/Diode. Application specific and high performance products: trench MOS, Supper Junction MOSFET develop for Co-pack product. High performance Diode develop for PFC application.
Quick answers generated from the profile data available on this page.
Max Ma works for China Resources Microelectronics Limited --PDBG.
Max Ma is listed as Vice Director of HV Product Line at China Resources Microelectronics Limited --PDBG.
Max Ma is based in Chengdu, Sichuan, China while working with China Resources Microelectronics Limited --PDBG.
Max Ma has worked for China Resources Microelectronics Limited --Pdbg, Skysilicon, Monolithic Power Systems, Inc., and Monolithic Power Systems.
You can use AeroLeads to view verified contact signals for Max Ma at China Resources Microelectronics Limited --PDBG, including work email, phone, and LinkedIn data when available.
Max Ma holds 工学博士, 微电子 from 重庆大学Chongqing University.
Max Ma is listed with skills including Semiconductor Device, Igbt Development, Power Planar Vdmosfet Development, Superjunction Device Development, Device Design, Semiconductor Fabrication, Engineering, and Circuits.
Search by job title, company, industry, location, and seniority. Export verified B2B contact data when you need it.
Start free trial Search contactsCheck these profiles if this is not the Max Ma you were looking for.