Technology Development Engineer
Development of Alternate Substrates including poly silicon carbide, sapphire, aluminum nitride, silicon nitride, and diamond.• Reviewed process conditions with subcontractors which included evaluating results and directing process improvements.• Successfully bonded 200mm poly silicon carbide wafer to silicon on insulator (SOI).• Worked on developing Dual Layer Transfer (DLT) of SOI devices to 200mm sapphire using IBM as a foundry. • Corrected iron contamination yield hit which resulted in a creating a new patent pending process for sapphire cleaning.• Qualified alternate wafer vendor for BSOS (Bonded Silicon on Sapphire) production.• Assisted in the SOS .25um process transfer from Peregrine to DMEA which included the tool and process transfer from SPAWAR to DMEA. • Developed WSi gate and selective oxide and nitride etches. • Defined vendor acceptance criteria and researched and determined which vendor to utilize in the purchase of an Automated Optical Inspection tool to inspect singulated SOS dice. • Developed, documented and released manufacturing processes and created yield reports for foundry engineer using dataPower.• Characterized tungsten and cobalt silicide fuses and shrunk WAT pad structures to increase usable wafer die space.