Mohammed W Rony, Ph.D.
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Mohammed W Rony, Ph.D. Email & Phone Number

Quality And Reliability Engineer @ Intel Corporation | Device Physics | Radiation Effects | Testing and Modeling at Intel Corporation
Location: Hillsboro, Oregon, United States 8 work roles 3 schools
1 work email found @vanderbilt.edu LinkedIn matched
✓ Verified May 2026 4 data sources Profile completeness 100%

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Current company
Intel Corporation
Role
Quality And Reliability Engineer @ Intel Corporation | Device Physics | Radiation Effects | Testing and Modeling
Location
Hillsboro, Oregon, United States
Company size
10 employees

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Mohammed W Rony, Ph.D. is listed as Quality And Reliability Engineer @ Intel Corporation | Device Physics | Radiation Effects | Testing and Modeling at Intel Corporation, a company with 10 employees, based in Hillsboro, Oregon, United States. AeroLeads shows a work email signal at vanderbilt.edu and a matched LinkedIn profile for Mohammed W Rony, Ph.D..

Mohammed W Rony, Ph.D. previously worked as Quality And Reliability Engineer at Intel Corporation and Phd Research Assistant at Vanderbilt University. Mohammed W Rony, Ph.D. holds Doctor Of Philosophy - Phd, Electrical Engineering from Vanderbilt University.

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About Mohammed W Rony, Ph.D.

CMOS Characterization | Failure analysis | Lab Tests | TCAD modeling | Radiation effects | SPICE ................................. Summary - Extensively worked with JPL, DTRA, US Air Force on various projects- 6 years of experience in designing & executing lab experiments for CMOS device characterization and failure analysis- Extensively simulated & characterized Si/Ge/InGaAs/GaN based FinFET/SOI/Nanowire/NAND cells using TCAD- Expert in testing and modeling radiation effects in devices/circuits/ICs: TID, SEE, SEU, SEFI, SEL- Proficient in statistical data analysis using Python, MATLAB, and scripting languages (Tcl/Perl, shell)................................. Device characterization tools HP4156A/B, Keithley 4200A used to investigate current-voltage (I-V), capacitance-voltage (C-V), Negative Bias Temperature Instability (NBTI), Hot Carrier Effects (HCE) stress test, Low frequency Noise (1/f noise)................................. Lab test equipments Logic analyzer/oscilloscopes, function generators, semiconductor parametric analyzer (SPA), electrical probing stations, device packaging and bonding on high speed packages................................. Device modeling tools - 2D and 3D CMOS device simulation in Sentaurus Process/Structure Editor/Device/Visualization- Drift-diffusion, hydrodynamic, thermodynamic, and quantum transport modeling- Quasi-stationary/transient/Monte-Carlo device simulation in standalone/mixed-mode- Modeling memory devices: carrier tunneling, trapping, de-trapping, floating gates- Modeling radiation effects: single event transient (SET), total ionization dose (TID)- Electrical & thermal effects in power devices (SiC, GaN), optoelectronic characteristics modeling of CMOS................................. SPICE modeling tools Device & circuit modeling, Monte-Carlo simulation in Mentor-graphics Eldo, Questa-ADMS, & HSPice................................. Radiation effects characterization tools ARACOR X-ray source, Pulsed Laser & Heavy Ion source, Proton beams, CRÈME96 to investigateSingle Event Effects (SEE), Single Event Upsets (SEU), Single Event Transients (SET), Single Event Latch-up (SEL), Single Event Functional Interrupt (SEFI), Soft errors, Prompt dose, Total Ionizing Dose (TID), SET Cross-section................................. Programming Languages Python, Tcl/Perl, Shell scripting, MATLAB, Verilog, Verilog-A/MS, C/C++

Listed skills include Application Specific Integrated Circuits, C, Verilog, Cgi/Perl, and 48 others.

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Mohammed W Rony, Ph.D.'s current company

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Intel Corporation
Intel Corporation
Quality And Reliability Engineer @ Intel Corporation | Device Physics | Radiation Effects | Testing and Modeling
(408) 765-8080
Website
intel.com
Employees
10
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8 roles

Mohammed W Rony, Ph.D. work experience

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Quality And Reliability Engineer

Current
Intel Corporation

Santa Clara, California, US

Jan 2022 - Present

Phd Research Assistant

Vanderbilt University

Nashville, Tennessee, US

NBTI & Total Ionizing Dose (TID) effects in deeply scaled HfO2/SiO2/Si gate stack Ge nanowire devices+Tested NBTI/TID behavior to characterize Ge nanowire devices, used charge separation method to estimate oxide/interface traps, reliability & lifetime. Built radiation & two stage NBTI TCAD models to explain the mechanismSingle-event-induced charge.

Aug 2017 - Dec 2021

Ltd Quality & Reliability Intern

Intel Corporation

Santa Clara, California, US

May 2021 - Nov 2021

Graduate Research Intern

Institute For Space And Defense Electronics (Isde)

Ionizing-Dose-Aware Behavioral Model of A/D Converters for Sphinx C&DH board used in CubeSats+ Ionizing dose aware architectural models of Flash, SAR, Pipeline ADCs are designed for system (board) level simulation+ Planned and executed TID tests to evaluate the parametric radiation sensitivity of A/D converters used in spaceships+ Models are validated.

May 2019 - Aug 2019

Graduate Soc Design Intern

Intel Corporation

Santa Clara, California, US

+ Built and ran STA model to check non-unate paths in clock network, unconstrained end points, un-clocked sequential nodes, unconnected power pins, un-annotated nets and dirty pins+ Extracted parasitic and ran STA to check setup, hold, transition violations for reg-to-reg timing analysis & optimization+ Manually fixed violations for timing closure, finally.

Aug 2018 - Dec 2018

Graduate Research Student

Vlsi Cad & Signal Integrity Lab, Lamar University

Beaumont, TX, US

  • PVT modeling of CMOS to reduce short channel effects (SSLOPE=~68mV/dec, DIBL=8mV/V).
  • Cell delay optimized with low Subthreshold slope.
  • Low power ASIC implementation with low leakage cell, MTCMOS, DTCMOS, multi-domain VDD
  • Dual-gate gate-all-around (GAA) Junctionless Nanowire Transistor (JNT) modeling.
  • Short Channel Effects (SCE) suppression by novel device architecture.
  • Mobility degradation analysis due to phonon scattering and surface roughness scattering.
Aug 2014 - Jul 2016

System Engineer

Grameenphone Ltd

Dhaka, BD

  • Integration and configuration of transmission,core and radio network.
  • Excellent client communication skills in terms of both business and technical commutations.
  • Technical analysis, fault handling and enhancement of voice, data and value added services provided by different vendors.
  • Solid technical skill & troubleshooting experience in the largest DWDM and SDH Optical Network of Bangladesh (700+ SDH & DWDM mux), SDH/PDH/Hybrid Microwave & IP Networking
  • Allocate and optimize necessary end-to-end capacity for all types of Trunk E1,SS7, SIGTRAN signaling and BTS as per business forecast.
  • Soft Rerouting (planning, execution) of traffic on emergency and remote support to network engineers for physical fault handling.
Jan 2011 - Aug 2013

Lecturer, Department Of Elctrical & Elctronic Engineering

Prime University

My responsibility included teaching, preparing question papers, taking exams and other official duties. Learnt to lead and guide a group of people, delivering thoughts and presentations to audiences

Jun 2010 - Dec 2010
Team & coworkers

Colleagues at Intel Corporation

Other employees you can reach at intel.com. View company contacts for 10 employees →

ST Shlomi Tzur Shlomi Tzur Colleague at Intel Corporation Jerusalem District, Israel, Israel View → CC Crystal Cardenas Crystal Cardenas Colleague at Intel Corporation Greater Phoenix Area, United States View → SD Santosh Das Santosh Das Colleague at Intel Corporation Gurgaon, Haryana, India, India View → SS Shiran Shperberg Shiran Shperberg Colleague at Intel Corporation Holon, Tel Aviv District, Israel, Israel View → SR Sant Ritu Awadh Sant Ritu Awadh Colleague at Intel Corporation Kakori, Uttar Pradesh, India, India View → MC Marie Conte Marie Conte Colleague at Intel Corporation United States, United States View → KM Kapilan Maheswaran Kapilan Maheswaran Colleague at Intel Corporation Beaverton, Oregon, United States, United States View → KI Khalid Irfan Khalid Irfan Colleague at Intel Corporation Bengaluru, Karnataka, India, India View → KP Krishnanand Prabhu Krishnanand Prabhu Colleague at Intel Corporation Bengaluru, Karnataka, India, India View → DL Damien Leonard Damien Leonard Colleague at Intel Corporation Ireland, Ireland View →
3 education records

Mohammed W Rony, Ph.D. education

Doctor Of Philosophy - Phd, Electrical Engineering

Vanderbilt University

Master’S Degree, Electrical Engineering

Lamar University

Bachelor’S Degree, Electrical And Electronics Engineering

Khulna University Of Engineering And Technology
FAQ

Frequently asked questions about Mohammed W Rony, Ph.D.

Quick answers generated from the profile data available on this page.

What company does Mohammed W Rony, Ph.D. work for?

Mohammed W Rony, Ph.D. works for Intel Corporation.

What is Mohammed W Rony, Ph.D.'s role at Intel Corporation?

Mohammed W Rony, Ph.D. is listed as Quality And Reliability Engineer @ Intel Corporation | Device Physics | Radiation Effects | Testing and Modeling at Intel Corporation.

What is Mohammed W Rony, Ph.D.'s email address?

AeroLeads has found 1 work email signal at @vanderbilt.edu for Mohammed W Rony, Ph.D. at Intel Corporation.

Where is Mohammed W Rony, Ph.D. based?

Mohammed W Rony, Ph.D. is based in Hillsboro, Oregon, United States while working with Intel Corporation.

What companies has Mohammed W Rony, Ph.D. worked for?

Mohammed W Rony, Ph.D. has worked for Intel Corporation, Vanderbilt University, Institute For Space And Defense Electronics (Isde), Vlsi Cad & Signal Integrity Lab, Lamar University, and Grameenphone Ltd.

Who are Mohammed W Rony, Ph.D.'s colleagues at Intel Corporation?

Mohammed W Rony, Ph.D.'s colleagues at Intel Corporation include Shlomi Tzur, Crystal Cardenas, Santosh Das, Shiran Shperberg, and Sant Ritu Awadh.

How can I contact Mohammed W Rony, Ph.D.?

You can use AeroLeads to view verified contact signals for Mohammed W Rony, Ph.D. at Intel Corporation, including work email, phone, and LinkedIn data when available.

What schools did Mohammed W Rony, Ph.D. attend?

Mohammed W Rony, Ph.D. holds Doctor Of Philosophy - Phd, Electrical Engineering from Vanderbilt University.

What skills is Mohammed W Rony, Ph.D. known for?

Mohammed W Rony, Ph.D. is listed with skills including Application Specific Integrated Circuits, C, Verilog, Cgi/Perl, Perl Automation, Perl, Static Timing Analysis, and Design Compiler.

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