Scott A. Nelson, Phd Email & Phone Number

Bethlehem, Pa

Supervising a team of engineers developing and manufacturing III-Arsenide and III-Antimonide epitaxial structures.

Collaborated with a team of engineers and technicians to develop and manufacture III-Arsenide and III-Antimonide epitaxial structures.• Improved reproducibility of key parameters over 40% by creating and managing a project resulting in new process controls.

Vadnais Heights, Mn

Collaborated with a multinational team of engineers to develop MOCVD and supporting processes to create epitaxial structure for 600V normally-off GaN on silicon power device and migrate from 150mm to 200mm substrates.• Enabled transfer of III-Nitride epitaxial structure for a 600V normally-off product to manufacturing by passing the management technology review.• Enhanced CV measurement repeatability 20% by improving data fitting and analysis software.

Vadnais Heights, Mn

Developed and transferred epitaxial growth processes for III-Nitride on silicon power and audio devices to manufacturing. Led epitaxial development for the MV GaN 2.0 project. Led the development of n-GaN and p-GaN materials. Oversaw radiation safety program as radiation safety officer.• Enriched design reliability by developing III-Nitride on silicon epitaxial processes and implementing SPC control and Cpk improvements, ensuring process transfer to manufacturing.• Enhanced Hall measurement reliability over 40% by discovering and eliminating surface state dependence and sample preparation differences.

Vadnais Heights, Mn

Created III-Nitride on silicon epitaxial processes critical in bringing product to market. Collaborated to set up new semiconductor fab. Managed characterization area including capital equipment purchases, process development, personnel training, and ISO documentation. Facilitated a plant-wide safety program and created a radiation safety program.• Decreased MOCVD post maintenance recovery time 70% and improved both thickness and composition uniformity by creating modeling software used with growth-condition DOE.• Minimized time and expenses by developing and documenting characterization methods, enabling in-house analysis of epitaxial material by XRD, XRR, AFM, white light reflectivity, resistivity, PR, Hall, and CV.• Saved more than $840K by negotiating lower prices for capital equipment and MOCVD source materials and recertifying existing facilities and tools.

White Bear Lake, Mn

Developed III-Nitride epitaxial processes for growth on silicon carbide, sapphire, and silicon substrates for use in power and UV detector applications. Made MOCVD tool and process modifications to improve the quality of the epitaxy, increase substrate size, and reduce development time. Developed and implemented characterization process improvements.• Improved resistivity measurement repeatability over 87% by discovering and instituting process improvements.• Enabled epitaxial growth on larger substrates by developing tool and process improvements.

Prescott, Wi

Created production plans and processes for prototype runs of insulated metal substrate (IMS) circuit boards enabling unique features while maintaining on-time delivery and controlling costs.• Created a new product for LED applications by designing processes for laser ablation and cutting of dielectric material off IMS circuit boards.• Saved over $500K annually by directing a plant-wide cost reduction program.

Vadnais Heights, Mn

Directed a team of 15 members in 980nm laser diode manufacturing, including MBE growth, epi characterization, and laser diode processing. • Increased laser diode chip manufacturing yield by more than 70% through DOE, continuous improvement, and SPC strategies.• Consistently met production goals for the 980nm laser diode chip manufacturing group and maintained expenses under budget, including administering a capital budget of over $7M for procuring semiconductor and thin film growth, processing, and characterization equipment.

Vadnais Heights, Mn

Led the semiconductor growth and characterization group for the manufacture of 980nm lasers diodes.• Improved laser power over 300% by collaborating with R&D engineers to create new epitaxial structures. • Awarded for outstanding performance by being selected to attend the 2001 ADC Engineering Excellence Symposium.

White Bear Lake, Mn

Developed and produced epitaxy for high power 980nm lasers by designing MBE processes and structures.• Ensured MBE epitaxial quality and reproducibility by designing material characterization processes including X-ray, Photoluminescence, SEM, and CV profile.• Reduced MBE setup time and eliminated yield losses while improving epitaxial structures and providing structure maps by creating growth control and simulation programs.

St. Paul, Mn

Developed processes to improve and produce II-VI blue-green laser diodes.• Performed growth, characterization, and wafer processing of MBE semiconductor structures for the development of II-VI blue-green lasers.• Reduced cost and down time by performing maintenance and repairs on multiple UHV systems and associated components.

Doctor Of Philosophy (Ph.D.), Physics

Dissertation titled "Thermodynamic and Magnetic Properties of PrCu4Al at Millikelvin Temperatures". Awards: Graduate School Fellowship.

Master Of Science (M.S.), Physics

Bachelor Of Science (B.S.), Mathematics And Physics

Research Assistant, Chemistry Exceptional Achievement in Mathematics by a Senior Award Graduated Summa cum Laude.