2DIntegratE

The general aim of the 2DIntegratE project is the development, characterization and modelling of 2D materials (2DM) heterostructures with group III Nitride semiconductors (III-N) as a platform for advanced electronic applications. More in details, the specific objectives of the project will be: O1: Integration of 2DM with III-N and tailoring the interface electronic properties playing on different factors (doping, strain, layers number of the 2DM). O2: Understanding the structural/chemical properties of the 2DM/III-N heterostructures and their correlation with the mechanisms of current transport at the interfaces. O3: Demonstration and electrical/optical characterization of heterojunction diodes, based on current transport across the ultra-sharp junctions between Gr or MoS2 and GaN or AlGaN/GaN heterostructures. Thanks to the combination of the wide bandgap of III-N alloys, the high mobility 2DEGs of Gr and AlGaN/GaN interface, and the ballistic electronic transport across the atomically thin Gr and MoS2 layers, these devices are expected to operate at ultra-high frequencies (THz) with extremely low-power dissipation, meeting the demand of energy efficiency from the EU Green Deal. Thanks to the combination of the wide bandgap of III-N alloys, the high mobility two-dimensional electron gas of graphene and AlGaN/GaN, and the ballistic electronic transport across the atomically thin graphene and MoS2 layers, these devices are expected to operate at ultra-high frequencies (THz) with extremely low-power dissipation, meeting the demand of energy efficiency from the EU Green Deal.