NEDL - NanoElectronic Device Lab

Solid-state memories have been playing an increasingly important role in the world of electronics, thanks not only to the large variety of applications currently arising from the unprecedented bit storage density of nanoscale technologies but also to the prospects of new memory-enabled computing paradigms on the horizon. In this context, the research activities performed by our group are mainly focused on the experimental and numerical investigation of the basic physics, the reliability, and the performance of nano-electronic devices for high-density data storage and in-memory computing. 3D-NAND Flash, NOR Flash, Phase-Change Memories (PCM), Resistive Random Access Memories (ReRAM), Electrochemical Random Access Memories (ECRAM) and Ferroelectric Memories are just the most relevant technologies investigated in the Lab. All the experimental samples under test are either provided by top semiconductor manufacturers or fabricated at the PoliFab (the Politecnico’s facility for the fabrication of micro and nano devices and structures).