Transphorm Inc.

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Transphorm is a global semiconductor company that develops gallium nitride (GaN) transistors and modules for high-voltage power conversion applications. Built on an industry-leading IP portfolio and over 300 years of combined GaN engineering expertise, Transphorm is delivering the highest performance and highest reliability GaN devices and best-in-class applications-driven design support to a growing customer base. Transphorm is creating innovations that move beyond the limitations of silicon to capture 90% of today’s energy losses. With the industry's only fully-qualified 650V GaN devices in production, including testing beyond JEDEC and extensive qualification and long-term reliability of all devices, Transphorm's reliability is unmatched by any GaN manufacturer.

Company Details

Employees
79
Founded
-
Address
75 Castilian Drive, Goleta,california 93117,united States
Phone
+805 456 1300
Email
in****@****usa.com
Industry
Semiconductor Manufacturing
NAICS
Semiconductor and Other Electronic Component Manufacturing
HQ
Goleta, California
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News

Transphorm Wins ARPA-E Contract for Novel Four Quadrant GaN Switches with Bidirectional Current and Voltage Control - Renesas Electronics

Transphorm Wins ARPA-E Contract for Novel Four Quadrant GaN Switches with Bidirectional Current and Voltage Control Renesas Electronics

Transphorm and ON Semiconductor Announce the Start of Production of Co-Branded GaN Power Devices - PR Newswire

Transphorm and ON Semiconductor Announce the Start of Production of Co-Branded GaN Power Devices PR Newswire

Transphorm at APEC 2023: New Technology, Trusted Performance in Action - Business Wire

Transphorm at APEC 2023: New Technology, Trusted Performance in Action Business Wire

Transphorm’s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications - Stock Titan

Transphorm’s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications Stock Titan

Transphorm GaN transistor hits short circuit robustness milestone ... - eeNews Europe

Transphorm GaN transistor hits short circuit robustness milestone ... eeNews Europe

Transphorm takes on SiC with simulation model of first 1200V GaN-on-Sapphire device - eeNews Europe

Transphorm takes on SiC with simulation model of first 1200V GaN-on-Sapphire device eeNews Europe

Transphorm Releases Two Battery Charger Reference Designs Ideal for Two- and Three-Wheeled Electric Vehicles - Renesas Electronics

Transphorm Releases Two Battery Charger Reference Designs Ideal for Two- and Three-Wheeled Electric Vehicles Renesas Electronics

Transphorm Introduces Six SuperGaN FETs Pin-to-Pin Compatible With e-mode Devices - Renesas Electronics

Transphorm Introduces Six SuperGaN FETs Pin-to-Pin Compatible With e-mode Devices Renesas Electronics

Renesas to Acquire Transphorm to Expand its Power Portfolio with GaN Technology - Renesas Electronics

Renesas to Acquire Transphorm to Expand its Power Portfolio with GaN Technology Renesas Electronics

Transphorm's SuperGaN Gen IV Multi-Kilowatt Class Power FET Earns Automotive Qualification - Renesas Electronics

Transphorm's SuperGaN Gen IV Multi-Kilowatt Class Power FET Earns Automotive Qualification Renesas Electronics

Transphorm's SuperGaN Gen V FET Delivers World's Lowest Packaged On-resistance, Targeting Electric Vehicle Applications - Renesas Electronics

Transphorm's SuperGaN Gen V FET Delivers World's Lowest Packaged On-resistance, Targeting Electric Vehicle Applications Renesas Electronics

Transphorm's GaN FETs Enable High Reliability Medical Applications: LEMURIA Li-ion Battery Power Supply from Nayuta - Renesas Electronics

Transphorm's GaN FETs Enable High Reliability Medical Applications: LEMURIA Li-ion Battery Power Supply from Nayuta Renesas Electronics

Simulation Model of Industry's First 1200 V GaN-on-Sapphire Device Released by Transphorm - Renesas Electronics

Simulation Model of Industry's First 1200 V GaN-on-Sapphire Device Released by Transphorm Renesas Electronics

New Transphorm White Paper: Normally-Off D-Mode GaN Advantages Vs. Normally-Off E-Mode GaN - Renesas Electronics

New Transphorm White Paper: Normally-Off D-Mode GaN Advantages Vs. Normally-Off E-Mode GaN Renesas Electronics

Transphorm Releases Latest High Voltage GaN Reliability Data - Renesas Electronics

Transphorm Releases Latest High Voltage GaN Reliability Data Renesas Electronics

Transphorm and TDK-Lambda Announce Expansion of AC-DC GaN Power Module Family - Renesas Electronics

Transphorm and TDK-Lambda Announce Expansion of AC-DC GaN Power Module Family Renesas Electronics

Transphorm's Top-Side Cooled TOLT FET Delivers Superior Thermal and Electrical Performance for Computing, AI, Energy, and Automotive Power Systems - Renesas Electronics

Transphorm's Top-Side Cooled TOLT FET Delivers Superior Thermal and Electrical Performance for Computing, AI, Energy, and Automotive Power Systems Renesas Electronics

Bel Power Solutions and Transphorm Announce Family of Titanium Efficiency AC to DC Power Supplies - Renesas Electronics

Bel Power Solutions and Transphorm Announce Family of Titanium Efficiency AC to DC Power Supplies Renesas Electronics

Transphorm's GaN Used in AES' Latest Power Supplies for Large Passenger Airplanes - Renesas Electronics

Transphorm's GaN Used in AES' Latest Power Supplies for Large Passenger Airplanes Renesas Electronics

Transphorm Announces the Close of JV Transaction for Acquisition of AFSW Wafer-Fab - Business Wire

Transphorm Announces the Close of JV Transaction for Acquisition of AFSW Wafer-Fab Business Wire

Transphorm and Weltrend partner to release integrated GaN system-in-package - Semiconductor Today

Transphorm and Weltrend partner to release integrated GaN system-in-package Semiconductor Today

TDK's Subsidiary TDK-Lambda uses Transphorm GaN to Advance PFH Series AC-DC Power Supply - Renesas Electronics

TDK's Subsidiary TDK-Lambda uses Transphorm GaN to Advance PFH Series AC-DC Power Supply Renesas Electronics

Transphorm’s joint venture AFSW fab passes from Fujitsu to majority ownership by new partner JCP Capital - Semiconductor Today

Transphorm’s joint venture AFSW fab passes from Fujitsu to majority ownership by new partner JCP Capital Semiconductor Today

Transphorm Introduces SuperGaN® Power FETs with Launch of Gen IV GaN Platform - Renesas Electronics

Transphorm Introduces SuperGaN® Power FETs with Launch of Gen IV GaN Platform Renesas Electronics

Bel Power and Transphorm announce family of Titanium efficiency AC-to-DC power supplies - Semiconductor Today

Bel Power and Transphorm announce family of Titanium efficiency AC-to-DC power supplies Semiconductor Today

Two 4-Lead TO-247 GaN devices for industrial power ... - eeNews Europe

Two 4-Lead TO-247 GaN devices for industrial power ... eeNews Europe

Transphorm signs $4m GaN deal with Yaskawa ... - eeNews Europe

Transphorm signs $4m GaN deal with Yaskawa ... eeNews Europe

Transphorm to develop bidirectional four quadrant GaN switch ... - eeNews Europe

Transphorm to develop bidirectional four quadrant GaN switch ... eeNews Europe

Transphorm Wins $15 Million Contract from the National Security Technology Accelerator - Stock Titan

Transphorm Wins $15 Million Contract from the National Security Technology Accelerator Stock Titan

First top-side cooled TOLT GaN FET ... - eeNews Europe

First top-side cooled TOLT GaN FET ... eeNews Europe

Transphorm launches first 600V GaN transistor in TO-247 package - Semiconductor Today

Transphorm launches first 600V GaN transistor in TO-247 package Semiconductor Today

Semiconductor Today - Semiconductor Today

Semiconductor Today Semiconductor Today

Transphorming the power transistor industry using GaN - Yole Group

Transphorming the power transistor industry using GaN Yole Group

B. Riley Financial | Diversified Financial Services Platform - FinancialContent

B. Riley Financial | Diversified Financial Services Platform FinancialContent

Contact - The Lethbridge Herald - News and Sports from around Lethbridge - FinancialContent

Contact - The Lethbridge Herald - News and Sports from around Lethbridge FinancialContent

GaN-on-Sapphire 1200V FET model and datasheet - Electronics Weekly

GaN-on-Sapphire 1200V FET model and datasheet Electronics Weekly

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