Innoscience (HKEX: 02577.HK) is the global leader in GaN process innovation and GaN power device manufacturing. Innoscience's device design and performance have set the global standard for GaN.
The company's GaN products are widely used in low-voltage, medium-voltage and high-voltage applications, with GaN process node voltages ranging from 15V to 1200V. With 800+ patents granted or pending, Innoscience's products are known for their superior performance, reliability and functionality in applications from 20W to 20kW. Innoscience is committed to creating a bright future for GaN.
For more information, please visit www.innoscience.com.
Company Details
- Employees
- 81
- Founded
- -
- Address
- 1066 Lu Shen Ave, Foho High-Tech Zone, Wujiang District,suzhou,jiangsu 215211,china
- Industry
- Semiconductor Manufacturing
- NAICS
-
Semiconductor and Other Electronic Component Manufacturing
- Website
- http://www.innoscience.com/
- Keywords
- power devices, wide bandgap semiconductors, GaN FET, GaN power device manufacturing, 8-inch GaN-on-Si epitaxy, 8-inch GaN-on-Si wafer processing, e-mode GaN device, HV (650V) GaN device, LV (30V-150V) GaN device, Silicon compatible GaN processing, Power Electronics, Cost-effective GaN manufacturing, Mass manufacturing of GaN device.
- HQ
- Wujiang District, Suzhou, Jiangsu
Innoscience Questions
Innoscience's website is http://www.innoscience.com/
Innoscience's LinkedIn profile is https://www.linkedin.com/company/innoscience-technology
Innoscience has
81 employees.
View email and phone details for 81
employees at Innoscience.
Innoscience's industry is
Semiconductor Manufacturing
Innoscience's top competitors are
Cambridge Gan Devices Ltd,
Power Integrations,
Infineon Technologies,
Monolithic Power Systems, Inc.,
Nexperia,
Epc - Efficient Power Conversion,
Onsemi,
Transphorm Inc.,
Wolfspeed,
Navitas Semiconductor.
Innoscience's categories are Semiconductor Manufacturing
Innoscience's founding year is 2015
