Paul David Email & Phone Number

Durham, North Carolina, United States

• Responsible for leading a high impact design change which would result in a substantial decrease in product defectivity and increase device robustness to switching stresses.
• Proposed various projects for Yield and Quality improvements by analyzing real-world performance data and studying workflow processes.
• Compiled weekly KPI report related to complete power product portfolio manufacturing performance.
• Owned and monitored highest volume products in power device fab, resolving yield and quality issues.

United States

• Setup and training of electrical characterization equipment for packaged and wafer level devices for product, device & integration engineering teams leading to fast cohesive cycles of learnings from bare wafer to.
• Managed and mentored technicians & junior engineers to perform accurate routine wafer characterization ensuring >90% utilization and high engineering data throughput.
• Oversaw ~0% down time operation and maintenance of >$300k in test equipment and implemented strategic upgrades to align engineering capabilities with company goals.
• Managed process module development of 1200V device portfolio to improve manufacturability and yield.
• Analyzed large electrical wafer sort data and inline fab data to drive yield improvement & correlated electrical parameters to process experiments for product performance improvements.
• Worked extensively in Process Integration team to investigate device physics related phenomenon affecting transistor performance and reliability by developing non-standard characterization tests.

United States

San Jose, California

• Setup and maintained electrical characterization lab for GaN HEMT power transistors products in wafer and packaged form.
• Performed advanced and standard measurements (such as RDS(on), Gate Charge, Capacitance, etc.) on GaN based D-mode and E-mode devices for deeper understanding of device behavior, parameter extraction and modelling.
• Contributed by providing characterization, layout, and process feedback of GaN based devices leading to improved reliability and performance.
• Contributed to reliability testing of GaN devices crucial to device qualification for mass production.
• Achieved expansion of in-house characterization capabilities by design and implementation of specialized fixtures/techniques while saving company >90% cost of readily available solutions.
• Acted as a liaison between application, technical marketing and fab teams to drive customer-centric product improvements.

Albany, New York Area

Albany, New York Area

• Developed and optimized a Lab View program which interacts with a source-measurement unit to aid in mapping CNT devices on the device die.
• Growth of CNTs via CVD on patterned and unpatterned wafers
• Relating growth parameters to electronic and physical properties of CNTs.
• Employment of various characterization techniques such as SEM and Raman spectroscopy

Albany, New York Area

Using sputter deposition to grow thin film ZnO_(1-x) S_x on CIGS for efficiency data and on Quartz for various characterization techniques. Employment of various characterization techniques such as SEM, AFM, XRD, AES, UV-VIS Spectroscopy and Profilometry to relate efficiency data to the thin film characteristics and growth parameters.

Master Of Science - Ms, Nanoscale Engineering

“Steps towards characterizing DNA’s semiconducting behavior"

B.S, Nanoscale Engineering

Activities and Societies: National Society of Collegiate ScholarsSpellman Achievment Award 2011 Spellman Achievment Award 2012 Spellman.

High School Diploma, Science

Activities and Societies: Debate Team, Quiz Team and Cultural Secretary.