Robert Sacks Email & Phone Number

Ann Arbor, Mi

See below. Same location, same job as for Picometrix. Just new lords and masters.

Ann Arbor, Mi

Responsible for the start-up and operation of ~$2M Molecular Beam Epitaxy (MBE) growth and characterization facility. The facility includes both a GEN III MBE system, and a variety of ex-situ materials characterization tools, such as a high-resolution x-ray diffractometer, electrochemical C-V profiler, contactless resistivity probe, and Nomarski microscope. Using the GEN III for the growth of epitaxial III-V compound semiconductor layers such as InGaAs, InAlAs, GaAs, and InP used for the fabrication of high performance telecom wavelength photodetectors. These include both PIN's and APD's. Also growing low-temperature semiconductors for Terahertz systems. Worked closely with a local metrology company (k-Space Associates) to develop a band edge thermometry tool (BandiT), which has proven crucial to the reproducible growth of LT semiconductors. Responsible for both R&D and low volume production.

Responsible for start-up of MBE facility and associated research programs in III-V materials and devices. This included moving a GEN II MBE system from a previous employer (United Technologies) to OSU. Also responsible for major expansion of the facility to include an integrated Group IV/Metal MBE chamber, a XPS chamber, and a STM chamber. Improvements to III-V MBE chamber included major upgrade of computer automation system, upgrades of evaporation source controllers and power supplies, addition of a dual Be/CBr4 dopant source, and addition of a valved phosphorus cracker. Research activities have included: characterization and development of advanced Ga and Al sources, studies of in-situ monitoring with pyrometric interferometry, studies of non-stoichiometric (i.e. – low temperature grown) GaAs, (Al,Ga)As and (In,Ga)As, growth of epitaxial semiconductor-metal-semiconductor structures, growth of high In content lattice-mismatched (In,Al)As/(In,Ga)As structures, carbon doping of (In,Al)As and (In,Ga)As with CBr4, and work on several types of photonic devices. Much of the device work was through collaboration with small companies, and included photorefractive modulators, vertical cavity surface emitting lasers (VCSEL’s), edge emitting lasers, high speed photodetectors, and thermophotovoltaics.

Responsible for start-up of MBE program and using it to explore the materials properties and device applications of (Ga,Al,In)As epitaxial materials. Device applications included Heterojunction Acoustic Charge Transport (HACT) devices, MODFET's, photodetectors, electro-optic waveguide modulators, and Fabry-Perot etalon modulators. Co-inventor of the HACT device. Basic growth and materials studies included strain and dislocations in the (In,Ga)As/GaAs system, sources of residual doping, growth with dimeric As, and reduction of oval defect density. Was also responsible for major upgrades of Varian GEN II MBE system, including addition of e-beam evaporation chamber, going from 2" to 3" diameter substrate capability, and adding real-time growth monitoring.

Melville, Ny

Responsible for acquisition and start up of Riber 2300 MBE system. Grew GaAs and AlGaAs epitaxial layers for high speed varactor diodes, mixer diodes, and MESFET's.

Doctor Of Philosophy (Ph.D.), Solid State Chemistry

Bachelor Of Science (B.S.), Physics