Robert Sacks Email & Phone Number

Ann Arbor, MI

See below. Same location, same job as for Picometrix. Just new lords and masters.

Ann Arbor, MI

Responsible for the start-up and operation of ~$2M Molecular Beam Epitaxy (MBE) growth and characterization facility. The facility includes both a GEN III MBE system, and a variety of ex-situ materials characterization tools, such as a high-resolution x-ray diffractometer, electrochemical C-V profiler, contactless resistivity probe, and Nomarski.

Responsible for start-up of MBE facility and associated research programs in III-V materials and devices. This included moving a GEN II MBE system from a previous employer (United Technologies) to OSU. Also responsible for major expansion of the facility to include an integrated Group IV/Metal MBE chamber, a XPS chamber, and a STM chamber. Improvements to.

Responsible for start-up of MBE program and using it to explore the materials properties and device applications of (Ga,Al,In)As epitaxial materials. Device applications included Heterojunction Acoustic Charge Transport (HACT) devices, MODFET's, photodetectors, electro-optic waveguide modulators, and Fabry-Perot etalon modulators. Co-inventor of the HACT.

Melville, NY

Responsible for acquisition and start up of Riber 2300 MBE system. Grew GaAs and AlGaAs epitaxial layers for high speed varactor diodes, mixer diodes, and MESFET's.

Doctor Of Philosophy (Ph.D.), Solid State Chemistry

Bachelor Of Science (B.S.), Physics