Senior Principal Engineer
CurrentLeading a small R&D team in pursuit of disruptive high reliability power MOSFET technology.
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Patrick Shea is listed as Senior Principal Engineer at Renesas Electronics, a with 5650 employees, based in Melbourne, Florida, United States. AeroLeads shows a work email signal at renesas.com and a matched LinkedIn profile for Patrick Shea.
Patrick Shea previously worked as Senior Manager, Power MOSFET Device Engineering at Renesas Electronics and Senior Manager, Power MOSFET Device Engineering at Intersil (Acquired By Renesas). Patrick Shea holds Doctor Of Philosophy (Ph.D.), Electrical Engineering from University Of Central Florida.
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Demonstrated history of innovation and successful device technology development in the semiconductor industry. Power MOSFET process development experience includes NMOS/PMOS, Resurf LDMOS, Shielded Gate LDMOS, SOI Resurf LDMOS, Superjunction LDMOS, Superjunction VDMOS, and Shielded Gate VDMOS.Skilled in Solid State Physics, Semiconductor Device Physics, Semiconductor Process Development, Semiconductor Packaging, Semiconductor Device Reliability, Ionizing Radiation Effects, Radiation Hardening, TCAD Modeling and Simulation, Device Layout, Product Development, Microelectronics, and Power Electronics.
Listed skills include Semiconductors, Semiconductor Device, Microelectronics, Power Electronics, and 21 others.
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Melbourne, Florida, United States
Leading a small R&D team in pursuit of disruptive high reliability power MOSFET technology.
Technical lead and manager for discrete power MOSFET R&D at Renesas Electronics America.Developed MOSFET processes and released derivative High-Side and Low-Side FETs for Digital Multiphase Smart Power Stages (SPS) for AMD and Intel computer mainboard core power.
Technical lead and manager for discrete power MOSFET R&D at Intersil.MOSFET engineering for Digital Multiphase Smart Power Stages. Intersil was acquired by Renesas in February 2017.
GWS was acquired by Intersil in 2015 and became the core team for Power MOSFET R&D at Renesas Electronics America. We developed a variety of high performance power MOSFET processes and discrete FET products for the infrastructure server and aerospace DC-DC converter markets. Customer applications exhibited best in class efficiency and power density in both markets. Products:- Diverse family of novel Space-Qualified (MIL-STD) discrete MOSFET technologies with best in class SEGR safe operating area and electrical FOMs. Enabled disruptive rad-hard DC-DC converter technology currently in flight.- Three generations of low-voltage discrete lateral MOSFETs with best in class FOM for resonant DC-DC converters widely adopted in the infrastructure server market. - 15V, 30V, 60V, & 80V Shielded Gate LDMOS processes. Implemented in both discrete MOSFETs and high-current monolithic power stages.- 6V/40A Dual Gate Power NMOS with 9 mOhm-nC RDSON x QGtot FOM optimized for 3.3V gate drive. Patented novel buried tungsten process which significantly reduced both cell pitch and wafer warpage.- 15V to 200V Resurf LDMOS processes in bulk silicon and SOI for power switching applications. Includes shielded gate, double resurf, and superjunction.- 3V to 12V NMOS processes engineered to provide ultra-low RDSON(sp) for high-current inductive load switching applications.Responsibilities Included:- Creating novel device concepts- Process development and integration - Test mask definition and layout- DOE synthesis, tracking, and data analysis- TCAD process, device, and mixed-mode simulation- Reliability assurance test and characterization methodology development- Radiation hardness assurance methodology development and testing- Customer interface (USA)- Foundry interface (USA and Asia)- Product definition and specification- Patents- University collaboration- Recruiting
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Bao Phan
Colleague at Renesas ElectronicsVietnam, Viet Nam
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Denis Prozor
Colleague at Renesas ElectronicsDnipro, Dnipropetrovsk, Ukraine
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Wendy Chang
Colleague at Renesas ElectronicsSunnyvale, California, United States
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Michael Clodfelter
Colleague at Renesas ElectronicsBarrington Hills, Illinois, United States
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Phoebe Chan
Colleague at Renesas ElectronicsHong Kong Sar, Hong Kong
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Andy Perkins
Colleague at Renesas ElectronicsZurich, Switzerland
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明石健一
Colleague at Renesas ElectronicsDetroit Metropolitan Area, United States
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Lonny Trahan
Colleague at Renesas ElectronicsDallas, Texas, United States
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Satoshi Narumi
Colleague at Renesas ElectronicsSaitama, Japan
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Yutaka Uchimura
Colleague at Renesas ElectronicsDüsseldorf, North Rhine-Westphalia, Germany
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Microelectronics Focus Research Assistant Power Semiconductor Research Laboratory Advisor: John Shen Dissertation: “Radiation-Hard Power.
Microelectronics Focus Graduate Research Assistant Power Semiconductor Research Laboratory Advisor: John Shen Thesis: “Radiation-Hard.
Microelectronics track Undergraduate Research Assistant UCF Power Semiconductor Research Laboratory Advisor: John Shen - Presented Deep.
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Patrick Shea works for Renesas Electronics.
Patrick Shea is listed as Senior Principal Engineer at Renesas Electronics.
AeroLeads has found 1 work email signal at @renesas.com for Patrick Shea at Renesas Electronics.
Patrick Shea is based in Melbourne, Florida, United States while working with Renesas Electronics.
Patrick Shea has worked for Renesas Electronics, Intersil (Acquired By Renesas), and Great Wall Semiconductor (Acquired By Intersil).
Patrick Shea's colleagues at Renesas Electronics include Bao Phan, Denis Prozor, Wendy Chang, Michael Clodfelter, and Phoebe Chan.
You can use AeroLeads to view verified contact signals for Patrick Shea at Renesas Electronics, including work email, phone, and LinkedIn data when available.
Patrick Shea holds Doctor Of Philosophy (Ph.D.), Electrical Engineering from University Of Central Florida.
Patrick Shea is listed with skills including Semiconductors, Semiconductor Device, Microelectronics, Power Electronics, Cmos, Analog, Power Devices, and Semiconductor Process.
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